This title appears in the Scientific Report :
2008
Schottky barrier height engineering of NiSi/Si contacts by dopant segregation
Schottky barrier height engineering of NiSi/Si contacts by dopant segregation
Saved in:
Personal Name(s): | Urban, C. |
---|---|
Feste, S. F. / Zhao, Q. T. / Sandow, C. / Müller, M. / Mantl, S. | |
Contributing Institute: |
Center of Nanoelectronic Systems for Information Technology; CNI Halbleiter-Nanoelektronik; IBN-1 |
Published in: |
Material Research Society (MRS) Spring Meeting |
Imprint: |
2008
|
Conference: | San Franscisco, CA 2008-03-24 |
Document Type: |
Talk (non-conference) |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Publikationsportal JuSER |
Description not available. |