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This title appears in the Scientific Report : 2009 

Microcrystalline silicon carbide thin films grown by HWCVD at different filament temperatures and their application in n-i-p microcrystalline silicon solar cells

Microcrystalline silicon carbide thin films grown by HWCVD at different filament temperatures and their application in n-i-p microcrystalline silicon solar cells

To optimize the performance of microcrystalline silicon carbide (mu c-SiC:H) window layers in n-i-p type microcrystal line silicon (mu c-Si:H) solar cells, the influence of the rhenium filament temperature in the hot wire chemical vapor deposition process on the properties of mu c-SiC:H films and co...

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Personal Name(s): Chen, T.
Huang, Y. / Wang, H. / Yang, D. / Dasgupta, A. / Carius, R. / Finger, F.
Contributing Institute: Photovoltaik; IEF-5
Published in: Thin solid films, 517 (2009) S. 3513 - 3515
Imprint: Amsterdam [u.a.] Elsevier 2009
Physical Description: 3513 - 3515
DOI: 10.1016/j.tsf.2009.01.029
Document Type: Journal Article
Research Program: Erneuerbare Energien
Series Title: Thin Solid Films 517
Subject (ZB):
J
Microcrystalline silicon carbide
Catalytic CVD
Hot-wire deposition
Thin film solar cells
Publikationsportal JuSER
Please use the identifier: http://dx.doi.org/10.1016/j.tsf.2009.01.029 in citations.

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To optimize the performance of microcrystalline silicon carbide (mu c-SiC:H) window layers in n-i-p type microcrystal line silicon (mu c-Si:H) solar cells, the influence of the rhenium filament temperature in the hot wire chemical vapor deposition process on the properties of mu c-SiC:H films and corresponding solar cells were studied. The filament temperature T-F has a strong effect on the structure and optical properties of mu c-SiC:H films. Using these mu c-SiC:H films prepared in the range of T-F=1800-2000 degrees C as window layers in n-side illuminated mu c-Si:H solar cells, cell efficiencies of above 8.0% were achieved with 1 mu m thick mu c-Si:H absorber layer and Ag back reflector. Crown Copyright (C) 2009 Plublished by Elsevier B.V. All rights reserved.

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