1
Bondar, Oleksandr
2020
Table of Contents:
“... in FePd Films with Ag Underlayer -- Thermal Dispergation of Pb-In Alloys Films on the Molybdenum Substrate -- Structure and Low-temperature Properties of U-15 at.% T Alloys (T = Mo, Nb, Pt, Ru, Ti) -- Multilayer PECVD Si-C-N Films....”2020
Full text
2
3
4
Chen, Junhong.
2015
Table of Contents:
“...Introduction -- The Properties of Vertically-oriented Graphene -- PECVD Synthesis of Vertically-oriented Graphene: Mechanism and Plasma Sources -- PECVD Synthesis of Vertically-oriented Graphene: Precursor and Temperature Effects -- Atmospheric PECVD...”2015
Full text
5
6
Lambin, Philippe
2006
Table of Contents:
“... DEPOSITION METHOD -- PECVD GROWTH OF CARBON NANOTUBES -- CARBON NANOTUBES GROWTH AND ANCHORAGE TO CARBON FIBRES -- CVD SYNTHESIS OF CARBON NANOTUBES ON DIFFERENT SUBSTRATES -- INFLUENCE OF THE SUBSTRATE TYPES AND TREATMENTS ON CARBON NANOTUBE GROWTH BY CHEMICAL...”2006
Full text
7
8
9
10
Weimer, Alan W.
1997
Table of Contents:
“... -- Overall process -- Safety issues -- 22 Chemical vapor deposition (CVD) and infiltration (CVI) -- 23 Plasma-enhanced chemical vapor deposition (PECVD) -- Nine High Temperature Furnace Engineering -- Types of high temperature furnaces -- Safety issues -- 24...”1997
Full text
11
Williams, P. F.
1997
Table of Contents:
“...Plasma Etching -- to Plasma Etching -- Plasma Chemistry, Basic Processes and PECVD -- The Role of Ions in Reactive Ion Etching with Low Density Plasmas -- SiO2 Etching in High-Density Plasmas: Differences with Low-Density Plasmas -- Plasma Deposition...”1997
Full text
12
Harris, Gary L.
1992
Table of Contents:
“... Assisted Method at Temperatures Lower than 1000°C -- Si?C1?? Alloys Deposited on Silicon Using a Low-Cost, Hot-Wall, LPCVD Reactor -- Low Temperature PECVD Growth and Characterization of a-SiC:H Films Deposited from Silacyclobutane and Silane/Methane Precursor...”1992
Full text
13
14
15
Table of Contents:
“... Doped Amorphous Silicon Dioxide Thin Films -- Low Temperature PECVD Silicon Rich Silicon Dioxide Films Doped With Fluorine -- Transport, Trapping and Breakdown -- High Field Transport in SiO2 -- Hot Electrons in SiO2: Ballistic and Steady State Transport...”
Full text
Full text
16
Deal, Bruce E.
1988
Table of Contents:
“... Deposition (Remote PECVD) -- Anodic SiO2 for Low Temperature Gate Dielectrics -- II. Thermal and Structural Properties of SiO2 -- Local Atomic Structure of Thermally Grown SiO2 Films -- Structural Relaxation and Growth of SiO2 Films on Si -- Structural Relaxation...”1988
Full text