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Theses
epitaxy
FJKB - Elemental semiconductors
Print Edition
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Theses
epitaxy
FJKB - Elemental semiconductors
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Epitaktische Abscheidung von monokristallinem Silizium bei reduziertem Totaldruck.
Krullmann, Eike.
1981
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Niedertemperatur-Silicium-Epitaxie durch plasmaunterstützte chemische Abscheidung aus der Gasphase /
Ratz, Günter.
1995
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Krullmann, Eike.
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Ratz, Günter.
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epitaxy
silicon
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FGK - Thin film technology, epitaxy
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FJKB - Elemental semiconductors
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