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Ehrhart, P.
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Waser, R.
Poster
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Ehrhart, P.
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Waser, R.
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1
Poster
New tailored precursors for the MOCVD of group IVB metal oxides: high-k application
Thomas, R.
2005
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2
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Electrical properties of HfO2/SiOx, HfO2/SiO2 and HfO2/SiON stacks on Si as an alternate high-k gaste oxide material
Thomas, R.
2005
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3
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Growth of (Ba,Sr)TiO3 thin films by MOCVD: stoichiometry effects
Ehrhart, P.
2003
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4
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Deposition of BST thin films in a multi-wafer MOCVD reactor
Ehrhart, P.
2000
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5
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Metalorganic chemical vapor deposition of BaTiO3 and SrTiO3 thin films using a single solution source with a non-contact vaporizer
Ma, W.
2000
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5
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Poster
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Ehrhart, P.
Waser, R.
Fitsilis, F.
2
Jürgensen, H.
2
Regnery, S.
2
Schienle, F.
2
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Schumacher, M.
2
Thomas, R.
2
Bhakta, R.
1
Dauelsberg, M.
1
Devi, A.
1
Krumpen, W.
1
Lindner, J.
1
Ma, W.
1
Mantl, S.
1
Patil, U.
1
Rije, E.
1
Schäfer, P.
1
Strzyzewski, P.
1
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Research Program
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
3
Festkörperforschung für die Informationstechnik
2
Contributing Institute
Center of Nanoelectronic Systems for Information Technology; CNI
2
Elektronische Materialien; IFF-IEM
2
Institut für Festkörperforschung; IFF
2
Elektrokeramische Materialien; IFF-EKM
1
Institut für Halbleiterschichten und Bauelemente; ISG-1
1
Zentralabteilung für Chemische Analysen; ZCH
1
Scientific Report
2000
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2005
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2003
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