JuLib | Articles & more

1

Dissertation / PhD Thesis

Si/SiGe-Based Gate-Normal Tunneling Field-Effect Transistors

Glass, Stefan
2019

2

Journal Article

SiGe based line tunneling field-effect transistors

Glass, Stefan
2018

Nanoelectronic Devices, 18 (2018) 1, S. 1

3

Journal Article

Characteristics of Recessed-Gate TFETs With Line Tunneling

Lin, Jyi-Tsong
2018

IEEE transactions on electron devices, 65 (2018) 2, S. 769 - 775

4

Journal Article

A Novel Gate-Normal Tunneling Field-Effect Transistor With Dual-Metal Gate

Glass, Stefan
2018

IEEE journal of the Electron Devices Society, 6 (2018) S. 1070 - 1076

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5

Journal Article

Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contacts

Schulte-Braucks, Christian
2017

Journal of applied physics, 121 (2017) 20, S. 205705 -

Published on 2017-05-31. Available in OpenAccess from 2018-05-31. Published on 2017-05-31. Available in OpenAccess from 2018-05-31.

6

Journal Article

Experimental examination of tunneling paths in SiGe/Si gate-normal tunneling field-effect transistors

Glass, S.
2017

Applied physics letters, 111 (2017) 26, S. 263504 -

Published on 2017-12-27. Available in OpenAccess from 2018-12-27.

7

Journal Article

Ferroelectricity in Lu doped HfO2 layers

Tromm, T. C. U.
2017

Applied physics letters, 111 (2017) 14, S. 142904 -

Published on 2017-10-03. Available in OpenAccess from 2018-10-03. Published on 2017-10-03. Available in OpenAccess from 2018-10-03.

8

Journal Article

Experimental Investigation of ${C}$ – ${V}$ Characteristics of Si Tunnel FETs

Liu, Chang
2017

IEEE electron device letters, 38 (2017) 6, S. 818 - 821

9

Contribution to a book
Contribution to a conference proceedings

Examination of a new SiGe/Si heterostructure TFET concept based on vertical tunneling

Glass, S.
2017

10

Journal Article

Process modules for GeSn nanoelectronics with high Sn-contents

Schulte-Braucks, Christian
2017

Solid state electronics, 128 (2017) S. 54 - 59

11

Journal Article

Correlation of Bandgap Reduction with Inversion Response in (Si)GeSn/High-k/Metal Stacks

Schulte-Braucks, C.
2017

ACS applied materials & interfaces, 9 (2017) 10, S. 9102 - 9109

12

Journal Article

Line Tunneling Dominating Charge Transport in SiGe/Si Heterostructure TFETs

Blaeser, Sebastian
2016

IEEE transactions on electron devices, 63 (2016) 11, S. 4173 - 4178

13

Contribution to a book
Contribution to a conference proceedings

Process modules for GeSn nanoelectronics with high Sn-contents

Schulte-Braucks, Christian
2016

14

Contribution to a book
Contribution to a conference proceedings

Si n-TFETs on ultra thin body with suppressed ambipolarity

Liu, Chang
2016

15

Journal Article

Experimental $I$ – $V(T)$ and $C$ – $V$ Analysis of Si Planar p-TFETs on Ultrathin Body

Liu, Chang
2016

IEEE transactions on electron devices, 63 (2016) 12, S. 5036 - 5040

16

Conference Presentation

Compositional trends in GeSn contacts and MOScaps for electronic application

Schulte-Braucks, Christian
2016

17

Talk (non-conference)

Progress in (Si)GeSn investigations for electronic applications

Schulte-Braucks, Christian
2016

18

Journal Article

Low Temperature Deposition of High-k/Metal Gate Stacks on High-Sn Content (Si)GeSn-Alloys

Schulte-Braucks, C.
2016

ACS applied materials & interfaces, 8 (2016) 20, S. 13133 - 13139

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19

Contribution to a conference proceedings

Novel SiGe/Si line tunneling TFET with high Ion at low Vdd and constant SS

Blaeser, S.
2015

20

Conference Presentation

Investigation of ternary SiGeSn MOS structures

Schulte-Braucks, Christian
2015

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