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Holländer, Bernhard
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Knoll, Lars
Journal Article
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Holländer, Bernhard
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Knoll, Lars
Journal Article
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1
Journal Article
Homogeneous NiSi1−xGex layer formation on strained SiGe with ultrathin Ni layers
Liu, Linjie
2015
Microelectronic engineering, 139 (2015) S. 26 - 30
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2
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Ultrathin homogeneous Ni(Al) germanosilicide layer formation on strained SiGe with Al/Ni multi-layers
Liu, Linjie
2015
Microelectronic engineering, 137 (2015) S. 88 - 91
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Ultrathin highly uniform Ni(Al) germanosilicide layer with modulated B8 type Ni5(SiGe)3 phase formed on strained Si1−xGex layers
Liu, Linjie
2013
Applied physics letters, 103 (2013) 23, S. 231909 -
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Journal Article
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Holländer, Bernhard
Knoll, Lars
Liu, Linjie
3
Mantl, Siegfried
3
Mussler, Gregor
3
Wirths, Stephan
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Zhang, Miao
3
Zhao, Qing-Tai
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Buca, Dan Mihai
2
Jin, Lei
2
Xu, Dawei
2
Breuer, Uwe
1
Di, Zeng Feng
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Di, Zengfeng
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Feng Di, Zeng
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Nichau, Alexander
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xu, dawei
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Research Program
Controlling Electron Charge-Based Phenomena
2
Frontiers of charge based Electronics
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Contributing Institute
Halbleiter-Nanoelektronik; PGI-9
3
Mikrostrukturforschung; PGI-5
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Analytik; ZEA-3
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JARA-FIT; JARA-FIT
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