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Kordos, P.
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Nastase, N.
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1
Journal Article
AlGaN/GaN round-HEMTs on (111) silicon substrates
Javorka, P.
2001
Electronics letters, 37 (2001) S. 1478
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Conference Presentation
Influence of AlN and GaN nucleation layers on the properties of doped and undoped AlGaN/GaN HEMT structures grown by MOVPE
Alam, A.
2001
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Conference Presentation
GaN and AlGaN/GaN HEMT on (111) Silicon Substrates
Alam, A.
2001
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3
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Conference Presentation
2
Journal Article
1
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Alam, A.
3
Hardtdegen, Hilde
3
Heuken, M.
3
Kordos, P.
Lüth, H.
3
Nastase, N.
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Bay, H.
2
Juergensen, H.
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Marso, M.
2
Bremser, M.
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Dadgar, A.
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Javorka, P.
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Kocan, M.
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Krost, A.
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Schineller, B.
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Schmidt, R.
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Halbleiterschichtsysteme und Mesoskopische Strukturen
3
Halbleiterbauelemente und Analytik
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Ionentechnik
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Institut für Halbleiterschichten und Bauelemente; ISG-1
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