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1

Journal Article

Dynamic redistribution of the electric field of the channel in AlGaN/GaN high electron mobility transistor with nanometer-scale gate length

Vitusevich, S. A.
2005

Applied physics letters, 87 (2005) S. 192110

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2

Hot carrier energy losses in conducting layers of AlGaN/GaN heterostructures grown on SiC and Al2O3 substrates

Danilchenko, B. A.
2005

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3

Capacitance characterization of AlN/GaN double barrier resonant tunnelling diodes

Kurakin, A. M.
2005

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4

Journal Article

Transport and noise features in AlGaN/GaN field effect transistors with nanometer-scaling gate length

Vitusevich, S. A.
2005

International journal of nanoscience, 04 (2005) S. 1001 - 1006

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