JuLib | Articles & more

1

Journal Article

Ultrafast and Highly Sensitive Photodetectors With Recessed Electrodes Fabricated on Low-Temperature-Grown GaAs

Mikulics, M.
2006

IEEE photonics technology letters, 18 (2006) S. 820 - 822

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2

Journal Article

Fabrication and Characterisation of GaAs Gunn Diode Chips for Application at 77 Ghz in Automotive Instustry

Förster, A.
2006

Sensors, 6 (2006) S. 349 - 360

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3

Journal Article

Ohmic contacts for GaAs based nanocolumns

Wensorra, J.
2006

Physica status solidi / A, 203 (2006) S. 3559 - 3564

4

Journal Article

Photomixers fabricated on nitrogen-ion-implanted GaAs

Mikulics, V. V.
2005

Applied physics letters, 87 (2005) S. 041106

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5

Journal Article

Ultrafast Low-Temperature-Grown Epitaxial GaAs Photodetectors Transferred on Flexible Plastic Substrates

Mikulics, V. V.
2005

IEEE photonics technology letters, 17 (2005) S. 1725 - 1727

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6

Journal Article

High frequency investigation of graded gap injectors for GaAs Gunn diodes

Montanari, S.
2005

Solid state electronics, 49 (2005) S. 245 - 250

7

Journal Article

Resonant tunneling in nanocolumns improved by quantum collimation

Wensorra, J.
2005

Nano letters, 5 (2005) S. 2470 - 2475

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8

Journal Article

Density-matrix description of a quantum dot system with variable laterial confinement in the single-electron tunneling regime

Indlekofer, K. M.
2002

Physica / B, 314 (2002) S. 499 - 502

9

Journal Article

Homogeneity analysis of ion-implanted resonant tunneling diodes for applications in digital logic circuits

Malindretos, J.
2002

Superlattices and microstructures, 31 (2002) S. 315 - 325

10

Journal Article

Resonant tunneling effect in a periodically modulated electrical field

Vitusevich, S. A.
2002

Physica / E, 13 (2002) S. 811 - 814

11

Journal Article

Resonant spectroscopy of electric-field-induced superlattices

Vitusevich, S.
2001

Journal of applied physics, 90 (2001) S. 2857

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12

Journal Article

A vertical resonant tunneling transistor for application in digital logic circuits

Stock, J.
2001

IEEE Transactions on Electron Devices, 48 (2001) S. 1028

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