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Lüth, H.
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Fox, P. T.
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Heidelberger, G.
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Kordos, P.
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Lüth, H.
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Fox, P. T.
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Heidelberger, G.
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1
Journal Article
High-power SiO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors
Heidelberger, G.
2005
Applied physics letters, 87 (2005) S. 143501
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Conference Presentation
Investigation of AlGaN/GaN-based MOSHFET performance relative to conventional and SiO2-passivated HFETs
Heidelberger, G.
2005
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Conference Presentation
Comparative study on unpassivated and passivated AlGaN/GaN HFETs and MOSHFETs
Heidelberger, G.
2005
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Journal Article
SiO2/AlGaN/GaN MOSHFET with 0.7 µm gate-length and fmax/fT of 40/24 GHz
Bernát, J.
2005
Electronics letters, 41 (2005) S. 667 - 668
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Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
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Center of Nanoelectronic Systems for Information Technology; CNI
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Institut für Halbleiterschichten und Bauelemente; ISG-1
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