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Lüth, H.
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Indlekofer, K. M.
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Malindretos, J.
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Lüth, H.
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Indlekofer, K. M.
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Malindretos, J.
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1
Journal Article
Modelling of polarization charge induced asymmetry of IV-characteristics for AlN/GaN based resonant tunneling structures
Indlekofer, K. M.
2002
Physica status solidi / B, 234 (2002) S. 769 - 772
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2
Talk (non-conference)
Modelling of polarization charge induced asymmetry of IV-characteristics for AlN/GaN based resonant tunneling structures
Indlekofer, K. M.
2002
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3
Journal Article
Homogeneity analysis of ion-implanted resonant tunneling diodes for applications in digital logic circuits
Malindretos, J.
2002
Superlattices and microstructures, 31 (2002) S. 315 - 325
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4
Poster
Technological concepts for the application of resonant tunneling diodes in bistable switching units
Malindretos, J.
1999
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5
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GaAs basierte resonante Tunneldioden für den Aufbau einer schnellen digitalen Logik
Malindretos, J.
1999
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6
Poster
GaAs based resonant tunneling diodes for application in fast digital logic elements
Malindretos, J.
1999
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6
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Poster
3
Journal Article
2
Talk (non-conference)
1
Name
Indlekofer, K. M.
Lüth, H.
Malindretos, J.
Förster, A.
4
Griebel, M.
3
Stock, J.
3
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Bertelli, M.
2
Donà , E.
2
Kocan, M.
2
Rizzi, A.
2
Hardtdegen, Hilde
1
Lepsa, M. I.
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Schmidt, R.
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Research Program
Halbleiterschichtsysteme und Mesoskopische Strukturen
3
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
3
Contributing Institute
Institut für Halbleiterschichten und Bauelemente; ISG-1
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Institut für Schicht- und Ionentechnik; ISI
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Scientific Report
1999
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