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Lüth, H.
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Marso, M.
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Nastase, N.
Halbleiterschichtsysteme und Mesoskopische Strukturen
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Lüth, H.
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Marso, M.
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Nastase, N.
Halbleiterschichtsysteme und Mesoskopische Strukturen
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Conference Presentation
Influence of AlN and GaN nucleation layers on the properties of doped and undoped AlGaN/GaN HEMT structures grown by MOVPE
Alam, A.
2001
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Journal Article
AlGaN/GaN round-HEMTs on (111) silicon substrates
Javorka, P.
2001
Electronics letters, 37 (2001) S. 1478
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Conference Presentation
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Alam, A.
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Hardtdegen, Hilde
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Heuken, M.
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Kordos, P.
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Lüth, H.
Marso, M.
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Nastase, N.
Bay, H.
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Research Program
Halbleiterschichtsysteme und Mesoskopische Strukturen
Halbleiterbauelemente und Analytik
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Ionentechnik
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Institut für Halbleiterschichten und Bauelemente; ISG-1
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2001
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