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Lüth, H.
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Naumov, A. V.
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Journal Article
Capacitance characterization of AlN/GaN double barrier resonant tunnelling diodes
Kurakin, A. M.
2006
Physica status solidi / C, 3 (2006) S. 2265 - 2269
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Vitusevich
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Capacitance characterization of AlN/GaN double barrier resonant tunnelling diodes
Kurakin, A. M.
2005
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Vitusevich
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Belyaev, A. E.
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Danylyuk, S. V.
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Foxon, C. T.
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Klein, N.
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Grundlagen für zukünftige Informationstechnologien
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Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
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Center of Nanoelectronic Systems for Information Technology; CNI
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Institut für Bio- und Chemosensoren; ISG-2
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