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Lüth, H.

Center of Nanoelectronic Systems for Information Technology; CNI AND Halbleiter-Nanoelektronik; IBN-1

2008

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Lüth, H.

Center of Nanoelectronic Systems for Information Technology; CNI AND Halbleiter-Nanoelektronik; IBN-1

2008

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Journal Article 5 Poster 3 Talk (non-conference) 3

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MOVPE of Cr-doped GaN: growth development and layer characteristics

Hardtdegen, H.
2008

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Journal Article

Investigation on Localized States in GaN Nanowires

Polenta, L.
2008

ACS nano, 2 (2008) S. 287 - 292

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Acoustic charge transport in GaN nanowires

Ebbecke, J.
2008

Nanotechnology, 19 (2008) S. 275708

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MOVPE of Cr-doped GaN with respect to spintronic applications

Hardtdegen, H.
2008

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Temperature-dependence of the phase-coherence length in InN nanowires

Blömers, C.
2008

Applied physics letters, 92 (2008)

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Interface and Wetting Layer Effect on the Catalyst-Free Growth of GaN Nanowires

Stoica, T.
2008

Small, 4 (2008) S. 751 - 754

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Phase-coherent transport in InN nanowires of various sizes

Blömers, C.
2008

Physical Review B Physical review / B, 77 77 (2008 2008) 20 20, S. 201301 201301

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GaN and InN Nanowires for Information Technology

Calarco, R.
2008

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Franz-Keldysh effect in GaN nanowires

Calarco, R.
2008

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Si-doping Effect on GaN and InN MBE-grown Nanowires

Calarco, R.
2008

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Self assembled III-N based nanowires: growth and characterization

Calarco, R.
2008

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Publications database 11 Open Access 2

Journal Article 5 Poster 3 Talk (non-conference) 3

Lüth, H. Calarco, R. 9 Marso, M. 7 Richter, T. 7 Stoica, T. 6 Debnath, R. K. 4 more ... Grützmacher, Detlev 4 Meijers, R. J. 4 Schäpers, Thomas 4 Sutter, E. 4 Cavallini, A. 3 Meijers, R. 3 Polenta, L. 3 Rossi, M. 3 Beschoten, B. 2 Blömers, C. 2 Bochem, H. P. 2 Breuer, U. 2 Cho, Y. S. 2 Hardtdegen, Hilde 2 Jeganathan, K. 2 Kaluza, N. 2 Schmalbuch, K. 2 Wenzel, D. 2 von der Ahe, M. 2 Ebbecke, J. 1 Maisch, S. 1 Wixforth, A 1 see all ... less ...

Grundlagen für zukünftige Informationstechnologien 11

Center of Nanoelectronic Systems for Information Technology; CNI Halbleiter-Nanoelektronik; IBN-1 Zentralabteilung für Chemische Analysen; ZCH 2 JARA-FIT; JARA-FIT 1

2008

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