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Lopes, J. M. J.
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Schubert, Jürgen
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Lopes, J. M. J.
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Schubert, Jürgen
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1
Contribution to a book
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MOSFETs with High Mobility Channel Materials and Higher-k/Metal Gate Stack
Yu, W.
2010
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2
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Strained-SiGe p-MOSFET with LaLuO3 as hihg-k gate dielectric and TiN as metal gate
Yu, W.
2010
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High mobility strained SOI MOSFETs with LaScO3/TiN gate stacks fabricated with a replacement gate process
Durgun Özben, E.
2010
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Rare-earth based alternative gate dielectrics for future integration in MOSFETs
Lopes, J. M. J.
2009
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Dürgün-Özben, Eylem
4
Lopes, J. M. J.
Mantl, S.
4
Schubert, Jürgen
Lenk, Steffi
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Luptak, R.
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Nichau, A.
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Zhao, Q. T.
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Besmehn, A.
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Buca, Dan Mihai
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Ghyselen, B.
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Roeckerath, M.
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Yu, W.
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Zhang, B.
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Bourdelle, K.K.
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Breuer, U.
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Hartmann, J.-M.
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Hartmann, J.M.
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Littmark, U.
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Research Program
Grundlagen für zukünftige Informationstechnologien
4
Contributing Institute
Halbleiter-Nanoelektronik; IBN-1
4
JARA-FIT; JARA-FIT
4
Institut für Bio- und Nanosysteme - Bioelektronik; IBN-2
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Zentralabteilung für Chemische Analysen; ZCH
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