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Malindretos, J.

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Journal Article 3 Poster 3 Internal Report 1 Talk (non-conference) 1

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Internal Report

WinGreen quantum transport simulation transport simulation program

Indlekofer, K. M.
2002

“...Indlekofer, K. M....”

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Journal Article

Homogeneity analysis of ion-implanted resonant tunneling diodes for applications in digital logic circuits

Malindretos, J.
2002

Superlattices and microstructures, 31 (2002) S. 315 - 325

“...Indlekofer, K. M....”

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Journal Article

Modelling of polarization charge induced asymmetry of IV-characteristics for AlN/GaN based resonant tunneling structures

Indlekofer, K. M.
2002

Physica status solidi / B, 234 (2002) S. 769 - 772

“...Indlekofer, K. M....”

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Talk (non-conference)

Modelling of polarization charge induced asymmetry of IV-characteristics for AlN/GaN based resonant tunneling structures

Indlekofer, K. M.
2002

“...Indlekofer, K. M....”

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Journal Article

A vertical resonant tunneling transistor for application in digital logic circuits

Stock, J.
2001

IEEE Transactions on Electron Devices, 48 (2001) S. 1028

“...Indlekofer, K.-M....”

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Technological concepts for the application of resonant tunneling diodes in bistable switching units

Malindretos, J.
1999

“...Indlekofer, K. M....”

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GaAs basierte resonante Tunneldioden für den Aufbau einer schnellen digitalen Logik

Malindretos, J.
1999

“...Indlekofer, K. M....”

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GaAs based resonant tunneling diodes for application in fast digital logic elements

Malindretos, J.
1999

“...Indlekofer, K. M....”

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Publications database 8 Open Access 1

Journal Article 3 Poster 3 Internal Report 1 Talk (non-conference) 1

Malindretos, J. Indlekofer, K. M. 7 Lüth, H. 7 Förster, A. 5 Stock, J. 4 Griebel, M. 3 more ... Bertelli, M. 2 Donà, E. 2 Kocan, M. 2 Rizzi, A. 2 Hardtdegen, Hilde 1 Indlekofer, K.-M. 1 Lepsa, M. I. 1 Pöttgens, M. 1 Schmidt, R. 1 see all ... less ...

Halbleiterschichtsysteme und Mesoskopische Strukturen 4 Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik 4

Institut für Halbleiterschichten und Bauelemente; ISG-1 5 Institut für Schicht- und Ionentechnik; ISI 3

2002 4 1999 3 2001 1

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