JuLib | Articles & more - {"JARA-FIT; JARA-FIT"}

1

Journal Article

Physics of ultrathin-body silicon-on-insulator Schottky-barrier field-effect transistors

Knoch, J.
2007

Applied physics / A, 87 (2007) S. 351 - 357

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

2

Journal Article

Roughness improvement of the CoSi2/Si interface for an application as buried silicide

Zimmermann, S.
2007

Microelectronic engineering, 84 (2007) S. 2537

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

3

Journal Article

Dopant segregation in SOI Schottky-barrier MOSFETs

Knoch, J.
2007

Microelectronic engineering, 84 (2007) S. 2563

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

4

Journal Article

Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices

Knoch, J.
2007

Solid state electronics, 51 (2007) S. 572 - 578

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

5

Journal Article

Improved Carrier Injection in Ultrathin-Body SOI Schottky-Barrier MOSFETs

Zhang, M.
2007

IEEE Electron Device Letters, 28 (2007) S. 223 - 225

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6

Journal Article

Effects of annealing on the electrical and interfacial properties of amorphous lanthanum scandate films prepared by molecular beam deposition

Lopes, J. M. J.
2007

Journal of applied physics, 101 (2007) S. 104109-1 - 104109

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7

Journal Article

Implantation-induced nonequilibrium reaction between Zn ions of 60 keV and SiO2 target

Amekura, H.
2007

Applied physics letters, 91 (2007) S. 063113-1

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8

Journal Article

Study of the relaxation of strain in patterned Si/SiGe structures using an x-ray diffraction technique

Khan, A. R.
2007

Semiconductor science and technology, 22 (2007) S. s212 - s215

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9

Journal Article

Embedment of ZnO nanoparticles in SiO2 by ion implantation and low-temperature oxidation

Amekura, H.
2007

Applied physics letters, 90 (2007) S. 083102

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10

Journal Article

Characterization and electrical properties of high-k GdScO3 thin films grown by atomic layer deposition

Myllymäki, P.
2007

Applied physics / A, 88 (2007) S. 633 - 637

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11

Talk (non-conference)

Large Current Enhancement in n-MOSFETs with Strained Si on Insulator

Mantl, S.
2007

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

12

Journal Article

Asymmetric strain relaxation in patterned SiGe layers: A means to enhance carrier mobilities in Si cap layers

Buca, D.
2007

Applied physics letters, 90 (2007) S. 032108

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13

Journal Article

Segregation of ion implanted sulfur in Si(100) after annealing and nickel silicidation

Zhao, Q. T.
2007

Journal of applied physics, 102 (2007) S. 023522-1 - 023522-4

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14

Contribution to a book
Contribution to a conference proceedings

Measurement of the Germanium fraction in strained and relaxed SiGe by Spectroscopic Ellipsometry

Moers, J.
2006

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

15

Journal Article

Preparation and characterization of rare earth scandates as alternative gate oxide materials

Wagner, M.
2006

Solid state electronics, 50 (2006) S. 58 - 62

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16

Conference Presentation

Measurement of the Germanium fraction in strained and relaxed SiGe by Spectroscopic Ellisometry

Moers, J.
2006

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17

Journal Article

Strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures by Si+ ion implantation

Holländer, B.
2006

Nuclear instruments & methods in physics research / B, 242 (2006) S. 568 - 571

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18

Journal Article

GaAs photodetectors prepared by high-energy and higt-dose nitrogen implantation

Mikulics, M.
2006

Applied physics letters, 89 (2006) S. 091103

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19

Journal Article

Growth of strained Si on He ion implanted Si/SiGe heterostructures

Buca, D.
2006

Solid state electronics, 50 (2006) S. 32 - 37

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20

Journal Article

Gadolinium scandate thin films as an alternative gate dielectric prepared by electron beam evaporation

Wagner, M.
2006

Applied physics letters, 88 (2006) S. 172901

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