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161

Characterization of lanthanum lutetium oxide thin films grown by atomic layer deposition as an alternative gate dielectric

Roeckerath, M.
2008

Thin solid films, 517 (2008) S. 201 - 203

162

Journal Article

Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings

Lanzerath, F.
2008

Journal of applied physics, 104 (2008) S. 044908

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163

Journal Article

Improved Carrier Injection in Ultrathin-Body SOI Schottky-Barrier MOSFETs

Zhang, M.
2007

IEEE Electron Device Letters, 28 (2007) S. 223 - 225

164

Journal Article

Embedment of ZnO nanoparticles in SiO2 by ion implantation and low-temperature oxidation

Amekura, H.
2007

Applied physics letters, 90 (2007) S. 083102

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165

Journal Article

Effects of annealing on the electrical and interfacial properties of amorphous lanthanum scandate films prepared by molecular beam deposition

Lopes, J. M. J.
2007

Journal of applied physics, 101 (2007) S. 104109-1 - 104109

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166

Journal Article

Study of the relaxation of strain in patterned Si/SiGe structures using an x-ray diffraction technique

Khan, A. R.
2007

Semiconductor science and technology, 22 (2007) S. s212 - s215

167

Journal Article

Characterization and electrical properties of high-k GdScO3 thin films grown by atomic layer deposition

Myllymäki, P.
2007

Applied physics / A, 88 (2007) S. 633 - 637

168

Journal Article

Physics of ultrathin-body silicon-on-insulator Schottky-barrier field-effect transistors

Knoch, J.
2007

Applied physics / A, 87 (2007) S. 351 - 357

169

Journal Article

Segregation of ion implanted sulfur in Si(100) after annealing and nickel silicidation

Zhao, Q. T.
2007

Journal of applied physics, 102 (2007) S. 023522-1 - 023522-4

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170

Journal Article

Roughness improvement of the CoSi2/Si interface for an application as buried silicide

Zimmermann, S.
2007

Microelectronic engineering, 84 (2007) S. 2537

171

Talk (non-conference)

Large Current Enhancement in n-MOSFETs with Strained Si on Insulator

Mantl, S.
2007

172

Journal Article

Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices

Knoch, J.
2007

Solid state electronics, 51 (2007) S. 572 - 578

173

Journal Article

Dopant segregation in SOI Schottky-barrier MOSFETs

Knoch, J.
2007

Microelectronic engineering, 84 (2007) S. 2563

174

Journal Article

Asymmetric strain relaxation in patterned SiGe layers: A means to enhance carrier mobilities in Si cap layers

Buca, D.
2007

Applied physics letters, 90 (2007) S. 032108

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175

Journal Article

Implantation-induced nonequilibrium reaction between Zn ions of 60 keV and SiO2 target

Amekura, H.
2007

Applied physics letters, 91 (2007) S. 063113-1

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176

Journal Article

sSOI fabrication by wafer bonding and layer splitting of thin SiGe virtual substrates

Radu, I.
2006

Materials science and engineering / B, 135 (2006) S. 231 - 234

177

Contribution to a book
Contribution to a conference proceedings

Schottky-barrier height tuning using dopant segregation in Schottky-barrier MOSFETs on fully-depleted SOI

Knoch, J.
2006

178

Conference Presentation

Measurement of the Germanium fraction in strained and relaxed SiGe by Spectroscopic Ellisometry

Moers, J.
2006

179

Contribution to a book
Contribution to a conference proceedings

Measurement of the Germanium fraction in strained and relaxed SiGe by Spectroscopic Ellipsometry

Moers, J.
2006

180

Journal Article

Strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures by Si+ ion implantation

Holländer, B.
2006

Nuclear instruments & methods in physics research / B, 242 (2006) S. 568 - 571

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