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Moers, J.
AND
Trellenkamp, Stefan
Halbleiter-Nanoelektronik; IBN-1
Grundlagen für zukünftige Informationstechnologien
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Moers, J.
AND
Trellenkamp, Stefan
Halbleiter-Nanoelektronik; IBN-1
Grundlagen für zukünftige Informationstechnologien
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1
Journal Article
Influence of the epitaxial growth and device processing on the overlay accuracy during processing of the d-DotFET
Moers, J.
2010
Thin solid films, 518 (2010) S. 2565 - 2568
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2
Journal Article
Gate-controlled Quantum collimation in nanocolumn resonant tunnelling transistors
Wensorra, J.
2009
Nanotechnology, 20 (2009) S. 465402
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3
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The disposable DotFET: A strained silicon channel on top of removed SiGe
Gerharz, J.
2009
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4
Conference Presentation
The disposable Dot Field Effect Transistor: Process flow and overlay requirements
Moers, J.
2008
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5
Conference Presentation
The disposable DotField Effect Transistor
Moers, J.
2008
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The disposable Dot Field Effect Transistor: Process flow and overlay requirements
Moers, J.
2008
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Conference Presentation
2
Contribution to a book
2
Contribution to a conference proceedings
2
Journal Article
2
Name
Moers, J.
Trellenkamp, Stefan
Gerharz, J.
5
Grützmacher, Detlev
5
Mussler, G.
2
Rinke, G.
2
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von der Hart, A.
2
Indlekofer, K. M.
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Lepsa, M. I.
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Lüth, H.
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Wensorra, J.
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van der Hart, A.
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Research Program
Grundlagen für zukünftige Informationstechnologien
Contributing Institute
Halbleiter-Nanoelektronik; IBN-1
Prozesstechnologie; IBN-PT
5
JARA-FIT; JARA-FIT
4
Center of Nanoelectronic Systems for Information Technology; CNI
2
Scientific Report
2008
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2009
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2010
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