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1

Journal Article

Theoretico-experimental analysis of bistability in the oscillatory response of a TaOx ReRAM to pulse train stimuli

Schmitt, N.
2024

Frontiers in nanotechnology, 6 (2024) S. 1301320

OpenAccess

2

Journal Article

A Study of the Electroforming Process in 1T1R Memory Arrays

Son, Seokki
2023

IEEE transactions on computer-aided design of integrated circuits and systems, 42 (2023) 2, S. 558 - 568

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3

Journal Article

A Deep Study of Resistance Switching Phenomena in TaO x ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification

Ascoli, Alon
2022

Advanced electronic materials, 8 (2022) 8, S. 2200182 -

OpenAccess

4

Journal Article

Effect of electron conduction on the read noise characteristics in ReRAM devices

Schnieders, K.
2022

APL materials, 10 (2022) 10, S. 101114 -

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5

Journal Article

Toward Simplified Physics-Based Memristor Modeling of Valence Change Mechanism Devices

Ntinas, Vasileios
2022

IEEE transactions on circuits and systems / 2, 69 (2022) 5, S. 2473 - 2477

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6

Journal Article

Comments on “Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)”

Hoffer, Barak
2021

IEEE transactions on electron devices, 68 (2021) 11, S. 5925 - 5925

7

Journal Article

Standards for the Characterization of Endurance in Resistive Switching Devices

Lanza, Mario
2021

ACS nano, 15 (2021) 11, S. 17214 - 17231

OpenAccess

8

Journal Article

Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)

Hoffer, Barak
2020

IEEE transactions on electron devices, 67 (2020) 8, S. 3115 - 3122

OpenAccess OpenAccess

9

Journal Article

Picosecond multilevel resistive switching in tantalum oxide thin films

Böttger, Ulrich
2020

Scientific reports, 10 (2020) 1, S. 16391

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10

Journal Article

Multi-valued and Fuzzy Logic Realization using TaOx Memristive Devices

Bhattacharjee, Debjyoti
2018

Scientific reports, 8 (2018) 1, S. 8

OpenAccess OpenAccess

11

Journal Article

Nonlinearity analysis of TaOX redox-based RRAM

Kim, Wonjoo
2016

Microelectronic engineering, 154 (2016) S. 38 - 41

12

Journal Article

Impact of oxygen exchange reaction at the ohmic interface in Ta$_{2}$ O$_{5}$ -based ReRAM devices

Kim, Wonjoo
2016

Nanoscale, 8 (2016) 41, S. 17774 - 17781

13

Journal Article

Realization of Minimum and Maximum Gate Function in Ta$_{2}$O$_{5}$-based Memristive Devices

Breuer, Thomas
2016

Scientific reports, 6 (2016) S. 23967 -

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14

Journal Article

A HfO 2 -Based Complementary Switching Crossbar Adder

Breuer, Thomas
2015

Advanced Electronic Materials, 1 (2015) 10, S. n/a - n/a

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