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1

Journal Article

Systematic study of Schottky barrier MOSFETs with dopant segregation on thin-body SOI

Urban, C.
2010

Solid state electronics, 54 (2010) S. 185 - 190

2

Journal Article

Radio-Frequency Study of Dopant-Segregated n-Type SB-MOSFETs on Thin-Body SOI

Urban, C.
2010

IEEE Electron Device Letters, 31 (2010) S. 537 - 539

3

Journal Article

Ultrathin Ni Silicides with low contact resistance on Strained and Unstrained Silicon

Knoll, L.
2010

IEEE Electron Device Letters, 31 (2010) S. 350 - 352

4

Journal Article

Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors

Roeckerath, M.
2010

Applied physics letters, 96 (2010) S. 013513

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5

Journal Article

Epitaxial growth of NiSi2 induced by sulfur segregation at the NiSi2/Si(100) interface

Zhao, Q. T.
2009

Journal of materials research, 24 (2009) S. 135139

6

Journal Article

Impact of electrostatics and doping concentration on the performance of silicon tunnel field-effect transistors

Sandow, C.
2009

Solid state electronics, 53 (2009) S. 1126 - 1129

7

Journal Article

Schottky-barrier height tuning of NiGe/n-Ge contacts using As and P segregation

Mueller, M.
2008

Materials science and engineering / C, 154-155 (2008) S. 168 - 171

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