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Zhao, Q. T.
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Ghyselen, B.
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Zhao, Q. T.
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Ghyselen, B.
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Contribution to a book
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Strained-SiGe p-MOSFET with LaLuO3 as hihg-k gate dielectric and TiN as metal gate
Yu, W.
2010
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2010
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2
Journal Article
Ultrathin Ni Silicides with low contact resistance on Strained and Unstrained Silicon
Knoll, L.
2010
IEEE Electron Device Letters, 31 (2010) S. 350 - 352
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Conference Presentation
High mobility strained SOI MOSFETs with LaScO3/TiN gate stacks fabricated with a replacement gate process
Durgun Özben, E.
2010
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Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts
Habicht, S.
2010
Nanotechnology, 21 (2010) S. 105701
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5
Conference Presentation
Strained-SiGe p-MOSFET with LaLuO3 as high-k gate dielectric and TiN as metal gate
Yu, W.
2010
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High mobility strained SOI MOSFETs with LaScO3/TiN gate stacks fabricated with a replacement gate process
Durgun Özben, E.
2010
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2010
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6
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Conference Presentation
2
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2
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Name
Ghyselen, B.
Mantl, S.
6
Zhao, Q. T.
Dürgün-Özben, Eylem
4
Lopes, J. M. J.
4
Nichau, A.
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Schubert, Jürgen
4
Besmehn, A.
2
Buca, Dan Mihai
2
Habicht, S.
2
Knoll, L.
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Lenk, Steffi
2
Luptak, R.
2
Roeckerath, M.
2
Yu, W.
2
Zhang, B.
2
Feste, S. F.
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Hartmann, J.-M.
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Hartmann, J.M.
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Trellenkamp, Stefan
1
Urban, C.
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Research Program
Grundlagen für zukünftige Informationstechnologien
6
Silicon-based nanostructures and nanodevices for long term nanoelectronics applications
2
Contributing Institute
Halbleiter-Nanoelektronik; IBN-1
6
JARA-FIT; JARA-FIT
6
Prozesstechnologie; IBN-PT
1
Scientific Report
2010
6
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