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1

Journal Article

Impact of the Ohmic Electrode on the Endurance of Oxide-Based Resistive Switching Memory

Wiefels, Stefan
2021

IEEE transactions on electron devices, 68 (2021) 3, S. 1024 - 1030

OpenAccess

2

Journal Article

The importance of singly charged oxygen vacancies for electrical conduction in monoclinic HfO 2

Mueller, Michael P.
2021

Journal of applied physics, 129 (2021) 2, S. 025104 -

Published on 2021-01-08. Available in OpenAccess from 2022-01-08. Published on 2021-01-08. Available in OpenAccess from 2022-01-08.

3

Journal Article

Current-limiting amplifier for high speed measurement of resistive switching data

Hennen, T.
2021

Review of scientific instruments, 92 (2021) 5, S. 054701 -

Published on 2021-05-03. Available in OpenAccess from 2022-05-03. Published on 2021-05-03. Available in OpenAccess from 2022-05-03.

4

Journal Article

Standards for the Characterization of Endurance in Resistive Switching Devices

Lanza, Mario
2021

ACS nano, 15 (2021) 11, S. 17214 - 17231

OpenAccess

5

Journal Article

A Consistent Model for Short-Term Instability and Long-Term Retention in Filamentary Oxide-Based Memristive Devices

Kopperberg, Nils
2021

ACS applied materials & interfaces, 13 (2021) 48, S. 58066 - 58075

OpenAccess

6

Journal Article

Utilizing the Switching Stochasticity of HfO2/TiOx-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns

Bengel, Christopher
2021

Frontiers in neuroscience, 15 (2021) S. 661856

OpenAccess

7

Journal Article

Exploring Area-Dependent Pr0.7Ca0.3MnO3-Based Memristive Devices as Synapses in Spiking and Artificial Neural Networks

Gutsche, Alexander
2021

Frontiers in neuroscience, 15 (2021) S. 661261

OpenAccess

8

Journal Article

Review of Manufacturing Process Defects and Their Effects on Memristive Devices

Poehls, L. M. Bolzani
2021

Journal of electronic testing, 47 (2021) S. 1

OpenAccess

9

Journal Article

Intrinsic RESET Speed Limit of Valence Change Memories

von Witzleben, Moritz
2021

ACS applied electronic materials, 3 (2021) 12, S. 5563 - 5572

OpenAccess OpenAccess

10

Journal Article

Comments on “Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)”

Hoffer, Barak
2021

IEEE transactions on electron devices, 68 (2021) 11, S. 5925 - 5925

11

Journal Article

Tuning electrochemically driven surface transformation in atomically flat LaNiO3 thin films for enhanced water electrolysis

Baeumer, Christoph
2021

Nature materials, 20 (2021) S. 674–682

Get full text Published on 2021-01-11. Available in OpenAccess from 2021-07-11. Restricted

12

Journal Article

Theory and experimental verification of configurable computing with stochastic memristors

Naous, Rawan
2021

Scientific reports, 11 (2021) 1, S. 4218

OpenAccess

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