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Elektronische Materialien; IFF-6
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Prozesstechnologie; IBN-PT
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1
Journal Article
Observation of unipolar resistance switching in silver doped methyl-silsesquioxane
Rosezin, R.
2010
Microelectronic engineering, 87 (2010)
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2
Journal Article
Resistively switching Pt/Spin-on glass/Ag nanocells for non-volatile memories fabricated with UV nanoimprint lithography
Meier, M.
2009
Microelectronic engineering, 86 (2009)
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Electrical properties of Pt interconnects for passive crossbar memory arrays
Rosezin, R.
2009
Microelectronic engineering, 86 (2009) S. 2275 - 2278
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Conference Presentation
Resistively switching Pt/Spin-On Glass/Ag nanocells for non-volatile memories fabricated with UV nanoimprint lithography
Meier, M.
2008
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Integration of resistance switching TiO2 in passive crossbar architecture for nonvolatile memory applications
Nauenheim, C.
2008
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Kügeler, C.
5
Trellenkamp, Stefan
5
Waser, R.
5
Rosezin, R.
4
Meier, M.
3
Rüdiger, A.
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Gilles, S.
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Mayer, Dirk
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Nauenheim, C.
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Grundlagen für zukünftige Informationstechnologien
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Elektronische Materialien; IFF-6
Prozesstechnologie; IBN-PT
JARA-FIT; JARA-FIT
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Institut für Bio- und Nanosysteme - Bioelektronik; IBN-2
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