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1

Conference Presentation

High mobility Si-Ge channel and high-k materials for NanoMOSFETs

Zhao, Q. T.
2010

2

Conference Presentation

High mobility Si-Ge channels and novel high-k materials for NanoMOSFETs

Yu, W.
2010

3

Contribution to a book
Contribution to a conference proceedings

Highmobility Si-Ge channels and novel high-k materials for NanoMOSFETs

Yu, W.
2010

4

Journal Article

Wet Chemical Etching of Si, Si1-xGex, and Ge in HF:H2O2:CH3COOH

Holländer, B.
2010

Journal of the Electrochemical Society, 157 (2010) S. H643 - H646

5

Journal Article

Strain tensors in layer systems by precision ion channeling measurements

Trinkaus, H.
2010

Journal of applied physics, 107 (2010) S. 124906

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6

Journal Article

Uniaxial strain relaxation in He+ ion implanted (110) oriented SiGe layers

Minamisawa, R. A.
2009

Applied physics letters, 95 (2009) S. 034102

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7

Conference Presentation

Uniaxial strain relaxation in He-implanted (110) oriented SiGe layers

Buca, D.
2009

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