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Halbleiter-Nanoelektronik; IBN-1
Holländer, Bernhard
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Heiermann, W.
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Halbleiter-Nanoelektronik; IBN-1
Holländer, Bernhard
AND
Heiermann, W.
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1
Contribution to a book
High temperature implantation: a solution for N-type junctions in strained silicon
Heiermann, W.
2009
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2
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High temperature antimony ion implantation in strained silicon-on-insulator
Buca, D.
2009
Solid state electronics, 53 (2009) S. 828 - 832
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High temperature implantation: a solution for N-type junctions in strained silicon
Heiermann, W.
2009
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Strained Si on Insulator-Fabrication and Applications
Buca, D.
2008
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High temperature Antimony implantation in strained Silicon
Heiermann, W.
2008
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Talk (non-conference)
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Buca, Dan Mihai
5
Heiermann, W.
Holländer, Bernhard
Trinkaus, H.
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Breuer, U.
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Mantl, S.
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Ghyselen, B.
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Mantl, M.
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Feste, S.
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Zhao, Q. T.
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Grundlagen für zukünftige Informationstechnologien
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Halbleiter-Nanoelektronik; IBN-1
JARA-FIT; JARA-FIT
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Center of Nanoelectronic Systems for Information Technology; CNI
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