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Halbleiter-Nanoelektronik; IBN-1
Contribution to a conference proceedings
Habicht, S.
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Halbleiter-Nanoelektronik; IBN-1
Contribution to a conference proceedings
Habicht, S.
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Contribution to a conference proceedings
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1
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Hole mobilities and electrical characteristics of O-gated silicon nanowire array FETs with 110 and 100 channel orientation
Habicht, S.
2010
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2
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Formation and Characterization of Ultra-Thin Ni Silicides on Strained and Unstrained Silicon
Knoll, L.
2010
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3
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Contact resistivity and nickel silicidation of strained and unstrained silicon nanowires
Habicht, S.
2010
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4
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Strained and Unstrained Si Nanowire FETs
Feste, S. F.
2009
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5
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Ultra thin Ni-silicides with low contact resistance on SOI and strained-SOI
Knoll, L.
2009
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6
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Performance enhancement of uniaxially-tensile strained Si NW-nFETs fabricated by lateral strain relaxation of SSOI
Feste, S. F.
2009
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Contribution to a book
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Contribution to a conference proceedings
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Habicht, S.
Mantl, S.
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Zhao, Q. T.
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Feste, S. F.
3
Knoll, L.
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Buca, Dan Mihai
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Urban, C.
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Boudelle, K.K.
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Grundlagen für zukünftige Informationstechnologien
6
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Halbleiter-Nanoelektronik; IBN-1
JARA-FIT; JARA-FIT
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