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Halbleiter-Nanoelektronik; PGI-9
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Halbleiter-Nanoelektronik; PGI-9
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1
Journal Article
Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn
Oehme, M.
2013
Journal of crystal growth, 384 (2013) S. 71 - 76
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...Kasper,
E
....
”
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2
Journal Article
Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys
Fournier-Lupien, J. -H.
2013
Applied physics letters, 103 (2013) 26, S. 263103
“
...Pippel,
E
....
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3
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Comparison of InAs nanowire conductivity: influence of growth method and structure
Sladek, Kamil
2012
Physica status solidi / C, 9 (2012) 2, S. 230 - 234
“
...Weirich, Thomas
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Journal Article
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Wirths, Stephan
3
Buca, Dan Mihai
2
Blömers, Christian
1
Desjardins, P.
1
Fournier-Lupien, J. -H.
1
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Grützmacher, Detlev
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Gül, Önder
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Hardtdegen, Hilde
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Hartmann, J. M.
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Hayazawa, N.
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Holländer, Bernhard
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Kasper, E.
1
Kostecki, K.
1
Lenk, Steffi
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Lepsa, Mihail Ion
1
Li, Zi-An
1
Lysov, Andrey
1
Lüth, Hans
1
Moutanabbir, O.
1
Mukherjee, Santanu
1
Mussler, Gregor
1
Oehme, M.
1
Pippel, E.
1
Prost, Werner
1
Schulze, J.
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Schäpers, Thomas
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Research Program
Frontiers of charge based Electronics
3
Contributing Institute
Halbleiter-Nanoelektronik; PGI-9
JARA-FIT; JARA-FIT
2
Scientific Report
2013
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