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Institut für Bio- und Nanosysteme - Bioelektronik; IBN-2
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Elektronische Materialien; IFF-6
Journal Article
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Institut für Bio- und Nanosysteme - Bioelektronik; IBN-2
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Elektronische Materialien; IFF-6
Journal Article
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1
Journal Article
High density 3D memory architecture based on the resistive switching effect
Kügeler, C.
2009
Solid state electronics, 53 (2009) S. 1287 - 1292
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2
Journal Article
Resistively switching Pt/Spin-on glass/Ag nanocells for non-volatile memories fabricated with UV nanoimprint lithography
Meier, M.
2009
Microelectronic engineering, 86 (2009)
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3
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A nonvolatile memory with resistively switching methyl-silsesquioxane
Meier, M.
2009
IEEE Electron Device Letters, 30 (2009) S. 8 - 10
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4
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Nanoimprint for future non-volatile memory and logic devices
Meier, M.
2008
Microelectronic engineering, 85 (2008) S. 870 - 872
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5
Journal Article
Electrochemical Fabrication and Characterization of Nanocontacts and nm-sized Gaps
Meszaros, G.
2007
Applied physics / A, 87 (2007) S. 569 - 575
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5
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Journal Article
Name
Gilles, S.
4
Kügeler, C.
4
Meier, M.
4
Waser, R.
4
Mayer, Dirk
3
Rosezin, R.
3
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Rüdiger, A.
2
Karthäuser, Silvia
1
Kronholz, S.
1
Meszaros, G.
1
Nauenheim, C.
1
Schindler, C.
1
Schindler, S.
1
Trellenkamp, Stefan
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Wandlowski, Th.
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Research Program
Grundlagen für zukünftige Informationstechnologien
5
Contributing Institute
Elektronische Materialien; IFF-6
Institut für Bio- und Nanosysteme - Bioelektronik; IBN-2
JARA-FIT; JARA-FIT
5
Center of Nanoelectronic Systems for Information Technology; CNI
1
Grenz- und Oberflächen; IBN-3
1
Prozesstechnologie; IBN-PT
1
Scientific Report
2009
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