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Institut für Halbleiterschichten und Bauelemente; ISG-1
Conference Presentation
Hardtdegen, Hilde
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Institut für Halbleiterschichten und Bauelemente; ISG-1
Conference Presentation
Hardtdegen, Hilde
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Conference Presentation
MOVPE growth and in situ characterization of GaN layers
Hardtdegen, H.
2003
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Conference Presentation
Optimierung eines neuen GaN Prozesses im Hinblick auf Homogenität
Steins, R.
2003
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Conference Presentation
Use of Modeling to Develop a New GaN Growth Process with Reduced Parasitic Deposits
Kaluza, N.
2003
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MOVPE GaN Growth: Determination of Activation Energy Using In-Situ Reflectometry
Kaluza, N.
2003
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Conference Presentation
Benefits of optical in-situ measurements for the MOVPE of compound semiconductor layers and device structures
Hardtdegen, H.
2003
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Conference Presentation
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Hardtdegen, Hilde
Kaluza, N.
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Steins, R.
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Lüth, H.
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Makarov, Yu. N.
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Schmidt, R.
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Talalaev, R. A.
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Wirtz, K.
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Yakovlev, E. V.
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Research Program
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
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Institut für Halbleiterschichten und Bauelemente; ISG-1
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