JuLib | Articles & more

1

Journal Article

Standards for the Characterization of Endurance in Resistive Switching Devices

Lanza, Mario
2021

ACS nano, 15 (2021) 11, S. 17214 - 17231

OpenAccess

2

Journal Article

A Consistent Model for Short-Term Instability and Long-Term Retention in Filamentary Oxide-Based Memristive Devices

Kopperberg, Nils
2021

ACS applied materials & interfaces, 13 (2021) 48, S. 58066 - 58075

OpenAccess

3

Journal Article

TiO x /Pt 3 Ti(111) surface-directed formation of electronically responsive supramolecular assemblies of tungsten oxide clusters

Moors, Marco
2021

Beilstein journal of nanotechnology, 12 (2021) S. 203 - 212

OpenAccess

4

Journal Article

Faster Diffusion of Oxygen Along Dislocations in (La,Sr)MnO 3+δ Is a Space‐Charge Phenomenon

Börgers, Jacqueline M.
2021

Advanced functional materials, 31 (2021) 51, S. 2105647 -

OpenAccess OpenAccess OpenAccess

5

Journal Article

In situ spectroscopic ellipsometry as a pathway toward achieving VO 2 stoichiometry for amorphous vanadium oxide with magnetron sputtering

Xu, C.
2021

AIP Advances, 11 (2021) 3, S. 035126 -

OpenAccess

6

Journal Article

Synthesis, Structure, and Surface Adsorption Characteristics of a Polynuclear Mn II,IV –Yb III Complex

Ueltzen, Katharina
2021

Inorganic chemistry, 60 (2021) 14, S. 10415 - 10425

7

Journal Article

Comments on “Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)”

Hoffer, Barak
2021

IEEE transactions on electron devices, 68 (2021) 11, S. 5925 - 5925

8

Journal Article

Intrinsic RESET Speed Limit of Valence Change Memories

von Witzleben, Moritz
2021

ACS applied electronic materials, 3 (2021) 12, S. 5563 - 5572

OpenAccess OpenAccess

9

Journal Article

The importance of singly charged oxygen vacancies for electrical conduction in monoclinic HfO 2

Mueller, Michael P.
2021

Journal of applied physics, 129 (2021) 2, S. 025104 -

Published on 2021-01-08. Available in OpenAccess from 2022-01-08. Published on 2021-01-08. Available in OpenAccess from 2022-01-08.

10

Journal Article

Operando characterization of interfacial charge transfer processes

Bäumer, Christoph
2021

Journal of applied physics, 129 (2021) 17, S. 170901 -

Published on 2021-05-06. Available in OpenAccess from 2022-05-06.

11

Journal Article

Impact of the Ohmic Electrode on the Endurance of Oxide-Based Resistive Switching Memory

Wiefels, Stefan
2021

IEEE transactions on electron devices, 68 (2021) 3, S. 1024 - 1030

OpenAccess

12

Journal Article

Migration Kinetics of Surface Ions in Oxygen‐Deficient Perovskite During Topotactic Transitions

Cao, Lei
2021

Small, 17 (2021) 51, S. 2104356

OpenAccess

13

Journal Article

Review of Manufacturing Process Defects and Their Effects on Memristive Devices

Poehls, L. M. Bolzani
2021

Journal of electronic testing, 47 (2021) S. 1

OpenAccess

14

Journal Article

Determining the Electrical Charging Speed Limit of ReRAM Devices

von Witzleben, M.
2021

IEEE journal of the Electron Devices Society, 9 (2021) S. 667 - 678

OpenAccess

15

Journal Article

Functional Modifications Induced via X‐ray Nanopatterning in TiO 2 Rutile Single Crystals

Alessio, Andrea
2021

Physica status solidi / Rapid research letters, 15 (2021) 10, S. 2100409

OpenAccess

16

Journal Article

Carbonate formation lowers the electrocatalytic activity of perovskite oxides for water electrolysis

Baeumer, Christoph
2021

Journal of materials chemistry / A, 9 (2021) 35, S. 19940-19948

OpenAccess

17

Journal Article

Current-limiting amplifier for high speed measurement of resistive switching data

Hennen, T.
2021

Review of scientific instruments, 92 (2021) 5, S. 054701 -

Published on 2021-05-03. Available in OpenAccess from 2022-05-03. Published on 2021-05-03. Available in OpenAccess from 2022-05-03.

18

Journal Article

Theory and experimental verification of configurable computing with stochastic memristors

Naous, Rawan
2021

Scientific reports, 11 (2021) 1, S. 4218

OpenAccess

19

Journal Article

Local inhomogeneities resolved by scanning probe techniques and their impact on local 2DEG formation in oxide heterostructures

Rose, M.-A.
2021

Nanoscale advances, 3 (2021) 14, S. 10.1039.D1NA00190F

OpenAccess

20

Journal Article

Utilizing the Switching Stochasticity of HfO2/TiOx-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns

Bengel, Christopher
2021

Frontiers in neuroscience, 15 (2021) S. 661856

OpenAccess

Narrow Search Results