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1

Journal Article

System model of neuromorphic sequence learning on a memristive crossbar array

Siegel, Sebastian
2023

Neuromorphic computing and engineering, 3 (2023) S. 024002

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2

Journal Article

Tailor-made synaptic dynamics based on memristive devices

Bengel, Christopher
2023

Frontiers in electronic materials, 3 (2023) S. 1061269

OpenAccess

3

Journal Article

Effect of electron conduction on the read noise characteristics in ReRAM devices

Schnieders, K.
2022

APL materials, 10 (2022) 10, S. 101114 -

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4

Journal Article

Filamentary TaO x /HfO 2 ReRAM Devices for Neural Networks Training with Analog In‐Memory Computing

Stecconi, Tommaso
2022

Advanced electronic materials, 8 (2022) 10, S. 2200448 -

OpenAccess

5

Journal Article

Toward Simplified Physics-Based Memristor Modeling of Valence Change Mechanism Devices

Ntinas, Vasileios
2022

IEEE transactions on circuits and systems / 2, 69 (2022) 5, S. 2473 - 2477

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6

Journal Article

Disentangling ionic and electronic contributions to the switching dynamics of memristive Pr 0.7 Ca 0.3 MnO 3 / Al devices by employing a two-resistor model

Gutsche, Alexander
2022

Physical review materials, 6 (2022) 9, S. 095002

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7

Journal Article

Strategies to Control the Relaxation Kinetics of Ag‐Based Diffusive Memristors and Implications for Device Operation

Chekol, Solomon Amsalu
2022

Advanced electronic materials, 8 (2022) 11, S. 2200549 -

OpenAccess

8

Journal Article

A Deep Study of Resistance Switching Phenomena in TaO x ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification

Ascoli, Alon
2022

Advanced electronic materials, 8 (2022) 8, S. 2200182 -

OpenAccess

9

Journal Article

Effect of the Threshold Kinetics on the Filament Relaxation Behavior of Ag‐Based Diffusive Memristors

Chekol, Solomon Amsalu
2022

Advanced functional materials, 32 (2022) 15, S. 2111242 -

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10

Journal Article

Chemical Structure of Conductive Filaments in Tantalum Oxide Memristive Devices and Its Implications for the Formation Mechanism

Heisig, Thomas
2022

Advanced electronic materials, 8 (2022) 8, S. 2100936 -

OpenAccess

11

Journal Article

Utilizing the Switching Stochasticity of HfO2/TiOx-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns

Bengel, Christopher
2021

Frontiers in neuroscience, 15 (2021) S. 661856

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12

Journal Article

Trade-off between variability and retention of memristive epitaxial SrTiO 3 devices

Rieck, Jan L.
2021

APL materials, 9 (2021) 2, S. 021110 -

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13

Journal Article

Exploring Area-Dependent Pr0.7Ca0.3MnO3-Based Memristive Devices as Synapses in Spiking and Artificial Neural Networks

Gutsche, Alexander
2021

Frontiers in neuroscience, 15 (2021) S. 661261

OpenAccess

14

Journal Article

HRS Instability in Oxide-Based Bipolar Resistive Switching Cells

Wiefels, Stefan
2020

IEEE transactions on electron devices, 67 (2020) 10, S. 4208 - 4215

15

Journal Article

In‐Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches

Ziegler, Tobias
2020

Advanced intelligent systems, 2 (2020) 10, S. 2070100 -

OpenAccess

16

Journal Article

Comprehensive model for the electronic transport in Pt/SrTi O 3 analog memristive devices

Funck, Carsten
2020

Physical Review B Physical review / B, 102 102 (2020 2020) 3 3, S. 035307 035307

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17

Journal Article

Variability-Aware Modeling of Filamentary Oxide-Based Bipolar Resistive Switching Cells Using SPICE Level Compact Models

Bengel, Christopher
2020

IEEE transactions on circuits and systems / 1 Regular papers, 67 (2020) 12, S. 4618 - 4630

OpenAccess

18

Journal Article

Exploiting the switching dynamics of HfO2/TiOx-based ReRAM devices for reliable analogue memristive behaviour

Cüppers, Felix
2019

APL materials, 7 (2019) S. 091105

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