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Contribution to a book
Institut für Halbleiterschichten und Bauelemente; ISG-1
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Contribution to a book
Institut für Halbleiterschichten und Bauelemente; ISG-1
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The use of ion implantation and annealing for the fabrication of strained silicon on thin SiGe virtual substrates
Buca, D.
2004
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Thin strain relaxed SiGe buffer layers on Si and SOI made by He ion implantation and annealing
Mantl, S.
2003
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Effect of helium ion implantation and annealing on the relaxation behaviour of pseudomorphic Si1-xGex/Si(100) buffer layers on Si (100) substrates
Luysberg, M.
2002
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Strain relaxation of He implanted, pseudomorphic Si1-xGex layers on Si(100)
Holländer, B.
2002
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Critical dimensions for the formation of misfit dislocations in In0.6Ga0.4As islands on GaAs(001)
Tillmann, R. G. E.
2002
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Contribution to a book
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Holländer, Bernhard
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Luysberg, Martina
4
Mantl, S.
4
Herzog, H.-J.
3
Lenk, Steffi
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Fichtner, P. F. P.
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Hackbarth, T.
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Kirch, D.
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Loo, R.
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Trinkaus, H.
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Bauer, M.
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Buca, Dan Mihai
1
Caymax, M.
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Förster, A.
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Hackbarth, Th.
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Hogg, S. M.
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Houben, L.
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Hüging, N.
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Mörschbächer, M. J.
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Tillmann, R. G. E.
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Research Program
Kondensierte Materie
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Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
4
Contributing Institute
Institut für Halbleiterschichten und Bauelemente; ISG-1
Mikrostrukturforschung; IFF-IMF
5
Center of Nanoelectronic Systems for Information Technology; CNI
1
Theorie III; IFF-TH-III
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Scientific Report
2002
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2003
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