JuLib | Articles & more - {"Elektronische Materialien; PGI-7"}

1

Journal Article

A Study of the Electroforming Process in 1T1R Memory Arrays

Son, Seokki
2023

IEEE transactions on computer-aided design of integrated circuits and systems, 42 (2023) 2, S. 558 - 568

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”
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2

Journal Article

Effect of electron conduction on the read noise characteristics in ReRAM devices

Schnieders, K.
2022

APL materials, 10 (2022) 10, S. 101114 -

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”
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3

Contribution to a conference proceedings
Journal Article

Performance Analysis of Memristive-CNN based on a VCM Device Model

Wang, Yongmin
2022

... IEEE International Symposium on Circuits and Systems proceedings, 1 (2022) S. 1

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”

4

Journal Article

A Deep Study of Resistance Switching Phenomena in TaO x ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification

Ascoli, Alon
2022

Advanced electronic materials, 8 (2022) 8, S. 2200182 -

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”
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5

Journal Article

Toward Simplified Physics-Based Memristor Modeling of Valence Change Mechanism Devices

Ntinas, Vasileios
2022

IEEE transactions on circuits and systems / 2, 69 (2022) 5, S. 2473 - 2477

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”
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6

Journal Article

Standards for the Characterization of Endurance in Resistive Switching Devices

Lanza, Mario
2021

ACS nano, 15 (2021) 11, S. 17214 - 17231

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”
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7

Journal Article

Comments on “Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)”

Hoffer, Barak
2021

IEEE transactions on electron devices, 68 (2021) 11, S. 5925 - 5925

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”

8

Journal Article

Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)

Hoffer, Barak
2020

IEEE transactions on electron devices, 67 (2020) 8, S. 3115 - 3122

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”
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9

Journal Article

Picosecond multilevel resistive switching in tantalum oxide thin films

Böttger, Ulrich
2020

Scientific reports, 10 (2020) 1, S. 16391

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”
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10

Journal Article

Reduction of the forming voltage through tailored oxygen non-stoichiometry in tantalum oxide ReRAM devices

Skaja, Katharina
2018

Scientific reports, 8 (2018) 1, S. 10861

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”
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11

Journal Article

Multi-valued and Fuzzy Logic Realization using TaOx Memristive Devices

Bhattacharjee, Debjyoti
2018

Scientific reports, 8 (2018) 1, S. 8

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”
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12

Journal Article

Nanoscale cation motion in TaO$_{x}$, HfO$_{x}$ and TiO$_{x}$ memristive systems

Wedig, Anja
2016

Nature nanotechnology, 11 (2016) S. 67-74

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”

13

Journal Article

Realization of Minimum and Maximum Gate Function in Ta$_{2}$O$_{5}$-based Memristive Devices

Breuer, Thomas
2016

Scientific reports, 6 (2016) S. 23967 -

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”
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14

Journal Article

Nanoionic Resistive Switching Memories: On the Physical Nature of the Dynamic Reset Process

Marchewka, Astrid
2016

Advanced Electronic Materials, 2 (2016) 1, S. n/a - n/a

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”

15

Journal Article

Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic

Kim, Wonjoo
2016

Scientific reports, 6 (2016) S. 36652 -

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”
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16

Journal Article

Impact of oxygen exchange reaction at the ohmic interface in Ta$_{2}$ O$_{5}$ -based ReRAM devices

Kim, Wonjoo
2016

Nanoscale, 8 (2016) 41, S. 17774 - 17781

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”

17

Journal Article

Nonlinearity analysis of TaOX redox-based RRAM

Kim, Wonjoo
2016

Microelectronic engineering, 154 (2016) S. 38 - 41

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”

18

Journal Article

3-Bit Multilevel Switching by Deep Reset Phenomenon in Pt/W/TaO$_{X}$ /Pt-ReRAM Devices

Kim, W.
2016

IEEE electron device letters, 37 (2016) 5, S. 564 - 567

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”

19

Journal Article

Low-current operations in 4F $^{2}$ -compatible Ta $_{2}$ O $_{5}$ -based complementary resistive switches

Breuer, Thomas
2015

Nanotechnology, 26 (2015) 41, S. 415202 -

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”

20

Journal Article

A HfO 2 -Based Complementary Switching Crossbar Adder

Breuer, Thomas
2015

Advanced Electronic Materials, 1 (2015) 10, S. n/a - n/a

“...Elektronische Materialien; PGI-7 Elektronische Materialien...”

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