JuLib | Articles & more

1

Journal Article

Investigation of a hydrogen implantation-induced blistering phenomenon in Si0.70Ge0.30

Singh, R.
2011

Semiconductor science and technology, 26 (2011) S. 125001

“...2011...”

2

Journal Article

Atomic layer deposition of HfO2 and Al2O3 layers on 300 mm Si wafers for gate stack technology

Lupták, R.
2011

Journal of vacuum science & technology / B, 29 (2011) S. 01A301

“...2011...”

3

Journal Article

Rare-earth oxide/TiN gate stacks on high mobility strained silicon on insulator for fully depleted metal-oxide-semiconductor field-effect transistors

Durgun Özben, E.
2011

Journal of vacuum science & technology / B, 29 (2011) S. 01A903

“...2011...”

4

Journal Article

MBE growth optimization of topological insulator Bi2Te3 films

Krumrain, J.
2011

Journal of crystal growth, 324 (2011) S. 115 - 118

“...2011...”

5

Journal Article

Oxygen Permeation and Stability Investigations on MIEC Membrane Materials Under Operating Conditions for Power Plant Processes

Engels, S.
2011

Journal of membrane science, 370 (2011)

“...2011...”

6

Journal Article

Integration of LaLuO3 (k 30) as High-k Dielectric on Strained and Unstrained SOI MOSFETs with Replacement Gate Process

Durgun Özben, E.
2011

IEEE Electron Device Letters, 32 (2011) S. 15 - 17

“...2011...”

7

Journal Article

An Improved Si tunnel Field Effect Transistor with a Buried Strained Si1-xGex Source

Zhao, Q.T.
2011

IEEE Electron Device Letters, 32 (2011) S. 1480 - 1482

“...2011...”

8

Journal Article

Influence of the substrate temperature on the Curie temperature and charge carrier density of epitaxial Gd-doped EuO films

Mairoser, T.
2011

Applied physics letters, 98 (2011) S. 102110

“...2011...”
Get full text Published under German "Allianz" Licensing conditions on 2011-03-10. Available in OpenAccess from 2011-03-10

9

Journal Article

Rare-Earth Scandate/TiN Gate Stacks in SOI MOSFETs Fabricated with a Full Replacement Gate Process

Durgun Özben, E.
2011

IEEE Transactions on Electron Devices, 58 (2011) S. 617 - 622

“...2011...”

10

Journal Article

X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor

Hrauda, N.
2011

Nano letters, 11 (2011) S. 2875 - 2880

“...2011...”

11

Journal Article

Silicon Nanowire Tunneling Field-Effect Transistor Arrays: Improving Subthreshold Performance Using Excimer Laser Annealing

Smith, J.T.
2011

IEEE Transactions on Electron Devices, 58 (2011) S. 1822 - 1829

“...2011...”

12

Journal Article

Robust surface electronic properties of topological insulators: Bi2Te3 films grown by molecular beam epitaxy

Plucinski, L.
2011

Applied physics letters, 98 (2011) S. 222503

“...2011...”
Get full text Published under German "Allianz" Licensing conditions on 2011-06-01. Available in OpenAccess from 2011-06-01

13

Journal Article

Epitaxial growth of Ni(Al)Si0.7Ge0.3 on Si0.7Ge0.3/Si(100) by Al interlayer mediated epitaxy

Zhang, B.
2011

Applied physics letters, 98 (2011) S. 252101

“...2011...”
Get full text Published under German "Allianz" Licensing conditions on 2011-06-20. Available in OpenAccess from 2011-06-20

14

Journal Article

Giant mesoscopic photoconductance fluctuations in Ge/Si quantum dot system

Stepina, P.
2011

Applied physics letters, 98 (2011) S. 142101

“...2011...”
Get full text OpenAccess OpenAccess

15

Journal Article

Mapping and statistics of ferroelectric domain boundary angles and types

Desmarais, J.
2011

Applied physics letters, 99 (2011) S. 162902

“...2011...”
Get full text Published under German "Allianz" Licensing conditions on 2011-10-17. Available in OpenAccess from 2011-10-17

16

Journal Article

Field effect transistor based on single crystalline InSb nanowire

Wang, Y.
2011

Journal of materials chemistry, 21 (2011) S. 2459 - 2462

“...2011...”
Get full text Published under German "Allianz" Licensing conditions on 2011-01-11. Available in OpenAccess from 2012-01-11

17

Journal Article

New method of creation of a rearrangeable local Coulomb potential profile and its application for investigations of local conductivity of InAs nanowires

Zhukov, A.A.
2011

Physica / E, 44 (2011) S. 690 - 695

“...2011...”

18

Journal Article

Optical and electrical properties of gold nanowires synthesized by electrochemical deposition

Yao, H.
2011

Journal of applied physics, 110 (2011) S. 094301

“...2011...”
Get full text Published under German "Allianz" Licensing conditions on 2011-11-02. Available in OpenAccess from 2011-11-02

19

Journal Article

Manipulating InAs nanowires with submicrometer precision

Flöhr, K.
2011

Review of scientific instruments, 82 (2011) S. 113705

“...2011...”
Get full text Published under German "Allianz" Licensing conditions on 2011-11-16. Available in OpenAccess from 2011-11-16

20

Journal Article

Tensile strained SiGe quantum well infrared photodetectors based on a light-hole ground state

Rauter, P.
2011

Applied physics letters, 98 (2011) S. 211106

“...2011...”
Get full text Published under German "Allianz" Licensing conditions on 2011-05-23. Available in OpenAccess from 2011-05-23

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