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1

Journal Article

2-D Physics-Based Compact DC Modeling of Double-Gate Tunnel-FETs

Horst, Fabian
2019

IEEE transactions on electron devices, 66 (2019) 1, S. 132-138

“...2018...”

2

Journal Article

Characteristics of Recessed-Gate TFETs With Line Tunneling

Lin, Jyi-Tsong
2018

IEEE transactions on electron devices, 65 (2018) 2, S. 769 - 775

“...2018...”

3

Journal Article

Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance

Saeidi, Ali
2018

Nanotechnology, 29 (2018) 9, S. 095202 -

“...2018...”

4

Journal Article

Silicon tunnel FET with average subthreshold slope of 55 mV/dec at low drain currents

Narimani, K.
2018

Solid state electronics, 143 (2018) S. 62 - 68

“...2018...”

5

Journal Article

Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions

Narimani, Keyvan
2018

Applied Sciences, 8 (2018) 5, S. 670 -

“...2018...”
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6

Journal Article

Exploring the Dynamics of Real-World Memristors on the Basis of Circuit Theoretic Model Predictions

Ascoli, A.
2018

IEEE circuits and systems magazine, 18 (2018) 2, S. 48 - 76

“...2018...”

7

Journal Article

Crossover From Deterministic to Stochastic Nature of Resistive-Switching Statistics in a Tantalum Oxide Thin Film

Nishi, Yoshifumi
2018

IEEE transactions on electron devices, 65 (2018) 10, S. 4320 - 4325

“...2018...”

8

Journal Article

Kogge-Stone Adder Realization using 1S1R Resistive Switching Crossbar Arrays

Bhattacharjee, Debjyoti
2018

ACM journal on emerging technologies in computing systems, 14 (2018) 2, S. Article No. 30

“...2018...”

9

Journal Article

KMC Simulation of the Electroforming, Set and Reset Processes in Redox-Based Resistive Switching Devices

Abbaspour, Elhameh
2018

IEEE transactions on nanotechnology, 17 (2018) 6, S. 1181 - 1188

“...2018...”

10

Journal Article

Field-enhanced route to generating anti-Frenkel pairs in HfO 2

Schie, Marcel
2018

Physical review materials, 2 (2018) 3, S. 035002

“...2018...”
OpenAccess OpenAccess

11

Journal Article

Dislocation bending in GaN/step-graded (Al,Ga)N/AlN buffer layers on Si(111) investigated by STM and STEM

Zhang, Lei
2018

The philosophical magazine, 98 (2018) 34, S. 3072 - 3085

“...2018...”

12

Journal Article

Optoelectronic properties of high-Si-content-Ge 1 −x – y Si x Sn y /Ge 1− x Sn x /Ge 1− x–y Si x Sn y double heterostructure

Fukuda, Masahiro
2018

Semiconductor science and technology, 33 (2018) 12, S. 124018 -

“...2018...”

13

Journal Article

Electrochemically prepared oxides for resistive switching devices

Zaffora, Andrea
2018

Electrochimica acta, 274 (2018) S. 103 - 111

“...2018...”

14

Journal Article

Spring-Like Pseudoelectroelasticity of Monocrystalline Cu 2 S Nanowire

Zhang, Qiubo
2018

Nano letters, 18 (2018) 8, S. 5070 - 5077

“...2018...”

15

Journal Article

Silicon Oxide (SiO x ): A Promising Material for Resistance Switching?

Mehonic, Adnan
2018

Advanced materials, 30 (2018) 43, S. 1801187 -

“...2018...”

16

Journal Article

Duality for open fermion systems: Energy-dependent weak coupling and quantum master equations

Schulenborg, J.
2018

Physical Review B Physical review / B, 98 98 (2018 2018) 23 23, S. 235405 235405

“...2018...”
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17

Journal Article

Attractive and driven interactions in quantum dots: Mechanisms for geometric pumping

Placke, B. A.
2018

Physical Review B Physical review / B, 98 98 (2018 2018) 8 8, S. 085307 085307

“...2018...”
OpenAccess OpenAccess

18

Journal Article

GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers

Stange, Daniela
2018

ACS photonics, 5 (2018) 11, S. 4628 - 4636

“...2018...”

19

Journal Article

Investigation of carrier confinement in direct bandgap GeSn/SiGeSn 2D and 0D heterostructures

Rainko, Denis
2018

Scientific reports, 8 (2018) 1, S. 15557

“...2018...”
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20

Journal Article

Epitaxial GeSn: impact of process conditions on material quality

Loo, Roger
2018

Semiconductor science and technology, 33 (2018) 11, S. 114010

“...2018...”

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