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Ionentechnik
Institut für Photovoltaik; IPV
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Ionentechnik
Institut für Photovoltaik; IPV
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Conference Presentation
Optische Eigenschaften von beta-FeSi2-Präzipitaten in Silizium
Schuller, B.
2001
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Journal Article
Efficient electroluminescence from rare earth doped MOS diodes
Wang, S.
2001
Materials science and engineering / B, 81 (2001) S. 102 - 104
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Talk (non-conference)
Luminescence lifetime on the 1.5 mu-m emission of beta-FeSi2 precipitate layers in silicon
Schuller, B.
2001
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Modification of beta-FeSi2 precipitate layers in silicon by hydrogen implantation
Schuller, B.
2001
Microelectronic engineering, 55 (2001) S. 219 - 225
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Study of structure and optical properties of beta-FeSi2 precipitates formed by ion-implantation of Fe+ in Si (100) and effect of co-implantation of Fe+ and Si+ in amorphous SiO2
Oyoshi, A. N.
2001
Thin solid films, 381 (2001) S. 194 - 201
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Formation of beta-FeSi2 precipitates at the SiO2/Si interface by Fe+ ion-implantation and their structural and optical properties
Oyoshi, A. N.
2001
Thin solid films, 381 (2001) S. 202 - 208
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4
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Carius, R.
6
Mantl, S.
5
Schuller, Bernd
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Lenk, Steffi
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Lenssen, D.
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Oyoshi, A. N.
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Research Program
Ionentechnik
Grundlagen und Technologie von Dünnschichtsolarzellen
4
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Institut für Halbleiterschichten und Bauelemente; ISG-1
6
Institut für Photovoltaik; IPV
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