JuLib | Articles & more - {"Semiconductor Science and Technology"}

1

Universal conductance fluctuations in a Bi 1.5 Sb 0.5 Te 1.8 Se 1.2 topological insulator nano-scaled Hall bar structure

Zimmermann, Erik
2023

Semiconductor science and technology, 38 (2023) 3, S. 035010 -

OpenAccess

2

Journal Article

Memristive devices based on single ZnO nanowires—from material synthesis to neuromorphic functionalities

Milano, G.
2022

Semiconductor science and technology, 37 (2022) 3, S. 034002 -

OpenAccess

3

Journal Article

Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer

Mikulics, M.
2021

Semiconductor science and technology, 36 (2021) 9, S. 095040 -

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4

Journal Article

Phase coherent transport and spin-orbit interaction in GaAs/InSb core/shell nanowires

Zellekens, Patrick
2020

Semiconductor science and technology, 35 (2020) 8, S. 13

OpenAccess OpenAccess

5

Journal Article

Epitaxial GeSn: impact of process conditions on material quality

Loo, Roger
2018

Semiconductor science and technology, 33 (2018) 11, S. 114010

6

Journal Article

Optoelectronic properties of high-Si-content-Ge 1 −x – y Si x Sn y /Ge 1− x Sn x /Ge 1− x–y Si x Sn y double heterostructure

Fukuda, Masahiro
2018

Semiconductor science and technology, 33 (2018) 12, S. 124018 -

7

Journal Article

Quantum interferometer based on GaAs/InAs core/shell nanowires connected to superconducting contacts

Haas, F.
2018

Semiconductor science and technology, 33 (2018) 6, S. 064001 -

8

Journal Article

Photon guiding characteristics of waveguide membranes coupled to a microdisk of ZnSe/(Zn,Mg)Se quantum well structures

Schmidt, Gesa
2017

Semiconductor science and technology, 32 (2017) 7, S. 075015

9

Journal Article

Optical critical points of Si x Ge 1− x − y Sn y alloys with high Si content

Fischer, Inga A
2017

Semiconductor science and technology, 32 (2017) 12, S. 124004 -

10

Journal Article

Electrical properties of lightly Ga-doped ZnO nanowires

Alagha, S.
2017

Semiconductor science and technology, 32 (2017) 12, S. 125010 -

11

Journal Article

Noise spectroscopy of nanowire structures: fundamental limits and application aspects

Vitusevich, Svetlana
2017

Semiconductor science and technology, 32 (2017) 4, S. 043002 -

12

Journal Article

Analytical electron microscopy study on gallium nitride systems doped with manganese and iron

Meingast, Arno
2015

Semiconductor science and technology, 30 (2015) 3, S. 035002

OpenAccess

13

Journal Article

GaN heterostructures with diamond and graphene

Pécz, B.
2015

Semiconductor science and technology, 30 (2015) 11, S. 114001 -

14

Journal Article

Ternary and quaternary Ni(Si)Ge(Sn) contact formation for highly strained Ge p- and n-MOSFETs

Wirths, S.
2015

Semiconductor science and technology, 30 (2015) 5, S. 055003

15

Journal Article

Hexagonal GdScO 3 : an epitaxial high-κ dielectric for GaN

Schäfer, A.
2014

Semiconductor science and technology, 29 (2014) 7, S. 075005

16

Journal Article

Impact of thermal annealing on nonequilibrium carrier dynamics in single-crystal, freestanding GaAs mesostructures

Mikulics, Martin
2014

Semiconductor science and technology, 29 (2014) 4, S. 045022

17

Journal Article

121 Sb and 125 Te nuclear inelastic scattering in Sb 2 Te 3 under high pressure424

Simon, Ronnie
2014

Semiconductor science and technology, 29 (2014) 12, S. 124001 -

18

Journal Article

Thermal transport in nanoscale semiconductors

Nielsch, Kornelius
2014

Semiconductor science and technology, 29 (2014) 12, S. 120301

19

Journal Article

AlGaN/GaN heterostructure field-effect transistors regrown on nitrogen implanted templates

Witte, W
2013

Semiconductor science and technology, 28 (2013) 8, S. 085006 -

20

Journal Article

GaAs-based metal-oxide-semiconductor field-effect transistor with aluminum oxide gate insulator prepared in situ by MOCVD

Kordos, P.
2012

Semiconductor science and technology, 27 (2012) 11, S. 115002 -

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