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Halbleiter-Nanoelektronik; IBN-1
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Select result number 1
1
Journal Article
Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts
Habicht, S.
2010
Nanotechnology, 21 (2010) S. 105701
“
...MeSH
Silicon
: chemistry...
”
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Select result number 2
2
Journal Article
Epitaxial integration of the highly spin-polarized ferromagnetic semiconductor EuO with silicon and GaN
Schmehl, A.
2007
Nature materials, 6 (2007) S. 882 - 887
“
...MeSH
Silicon
: chemistry...
”
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3
Journal Article
Nucleation and growth of GaN nanowires on Si (111) performed by molecular beam epitaxy
Calarco, R.
2007
Nano letters, 7 (2007) S. 2248 - 2251
“
...MeSH
Silicon
: chemistry...
”
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3
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Journal Article
3
Name
Calarco, R.
1
Debnath, R.
1
Feste, S. F.
1
Ghyselen, B.
1
Habicht, S.
1
Heeg, T.
1
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Herrnberger, A.
1
Idzerda, Y.
1
Knoll, L.
1
Liberati, M.
1
Lueth, H.
1
Mannhart, J.
1
Mantl, S.
1
Meijers, R.
1
Roeckerath, M.
1
Schlom, D. G.
1
Schmehl, A.
1
Schubert, Jürgen
1
Stoica, T.
1
Sutter, E.
1
Thiel, S.
1
Trellenkamp, Stefan
1
Vaithyanathan, V.
1
Zhao, Q. T.
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Research Program
Grundlagen für zukünftige Informationstechnologien
3
Silicon-based nanostructures and nanodevices for long term nanoelectronics applications
1
Contributing Institute
Halbleiter-Nanoelektronik; IBN-1
Center of Nanoelectronic Systems for Information Technology; CNI
2
JARA-FIT; JARA-FIT
1
Prozesstechnologie; IBN-PT
1
Scientific Report
2007
2
2010
1
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