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Kügeler, C.

Elektronische Materialien; IFF-6

2009

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Kügeler, C.

Elektronische Materialien; IFF-6

2009

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Journal Article 9 Contribution to a book 3 Contribution to a conference proceedings 3 Conference Presentation 1 Poster 1

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Journal Article

Integration of \"GexSe1-x\" in crossbar arrays for non-volatile memory applications

Soni, R.
2009

Microelectronic engineering, 86 (2009) S. 1054 - 1056

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Journal Article

A nonvolatile memory with resistively switching methyl-silsesquioxane

Meier, M.
2009

IEEE Electron Device Letters, 30 (2009) S. 8 - 10

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Journal Article

High density 3D memory architecture based on the resistive switching effect

Kügeler, C.
2009

Solid state electronics, 53 (2009) S. 1287 - 1292

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Fast resistive switching in WO3 thin films for non-volatile memory applications

Kügeler, C.
2009

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An Integrated Microelectromechanical Microwave Switch Based on Piezoelectric Actuation

Kügeler, C.
2009

Journal of electroceramics, 22 (2009)

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Journal Article

Electromechanical properties of lanthanum-doped lead hafnate titanate thin films for integrated piezoelectric MEMS applications

Kügeler, C.
2009

Applied physics / A, 94 (2009) S. 739 - 743

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Phenomenological considerations of resistively switching TiO2 in nano crossbar arrays

Nauenheim, C.
2009

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Reliability analysis of the low resistance state stability of Ge_0.3Se_0.7 based solid electrolyte nonvolatile memory cells

Soni, R.
2009

Applied physics letters, 94 (2009) S. 123503

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A multilayer RRAM nanoarchitecture with resistively switching Ag-doped spin-on glass

Meier, M.
2009

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A multilayer RRAM nanoarchitecture with resistively switching Ag-doped spin-on glass

Meier, M.
2009

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The influence of copper top electrode on the resistive switching effect in TiO2 thin films studied by conductive atomic force microscopy

Yang, Lin.
2009

Applied physics letters, 95 (2009) S. 013109

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Observation of unipolar resistance switching in silver doped methyl-silsesquioxane

Rosezin, R.
2009

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Resistively switching Pt/Spin-on glass/Ag nanocells for non-volatile memories fabricated with UV nanoimprint lithography

Meier, M.
2009

Microelectronic engineering, 86 (2009)

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Electrical properties of Pt interconnects for passive crossbar memory arrays

Rosezin, R.
2009

Microelectronic engineering, 86 (2009) S. 2275 - 2278

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Publications database 14 Open Access 2

Journal Article 9 Contribution to a book 3 Contribution to a conference proceedings 3 Conference Presentation 1 Poster 1

Kügeler, C. Waser, R. 13 Rosezin, R. 8 Meier, M. 7 Rüdiger, A. 7 Gilles, S. 5 more ... Böttger, U. 3 Trellenkamp, Stefan 3 Nauenheim, C. 2 Soni, R. 2 Hennings, A. 1 Holländer, Bernhard 1 Klopstra, B. 1 Kohlstedt, H. 1 Mayer, Dirk 1 Menzel, S. 1 Meuffels, Paul 1 Schindler, C. 1 Schindler, S. 1 Schneller, T. 1 Szot, K. 1 Weng, R. 1 Yang, Lin. 1 see all ... less ...

Grundlagen für zukünftige Informationstechnologien 14

Elektronische Materialien; IFF-6 JARA-FIT; JARA-FIT 14 Institut für Bio- und Nanosysteme - Bioelektronik; IBN-2 6 Prozesstechnologie; IBN-PT 2 Halbleiter-Nanoelektronik; IBN-1 1

2009

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