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Kaluza, N.
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Steins, R.
Institut für Halbleiterschichten und Bauelemente; ISG-1
Conference Presentation
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Kaluza, N.
AND
Steins, R.
Institut für Halbleiterschichten und Bauelemente; ISG-1
Conference Presentation
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1
Conference Presentation
Observation of Growth during the MOVPE of III-Nitrides
Hardtdegen, H.
2005
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2
Conference Presentation
MOVPE III-nitride growth for high frequency and/or high power application
Hardtdegen, H.
2005
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3
Conference Presentation
Einfluss von N2 als Trägergas für GaN Wachstum im invertierten Einlass
Steins, R.
2005
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4
Conference Presentation
Lumineszenz von gewachsenen und geätzten GaN-Nanosäulen
Thillosen, N.
2005
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5
Conference Presentation
In situ Untersuchungen von Wachstumsparametereinflüssen auf die MOVPE von GaN
Hardtdegen, H.
2005
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6
Conference Presentation
Optimization of nitride growth in single wafer horizontal MOVPE reactors for HEMTs
Kaluza, N.
2004
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7
Conference Presentation
Einfluss von N2 als Trägergas für GaN Wachstum im invertierten Einlass
Steins, R.
2004
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8
Conference Presentation
Luminescence Properties of Si-doped MOVPE n-GaN
Thillosen, N.
2004
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9
Conference Presentation
MOVPE process for horizontal reactors with reduced parasitic deposition
Hardtdegen, H.
2004
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10
Conference Presentation
MOVPE GaN growth: determination of activation energy using in-situ reflectometry
Kaluza, N.
2004
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11
Conference Presentation
Use of SiC band-gap temperature dependence for absolute calibration of emissivity corrected pyrometers in III-nitride MOVPE
Steins, R.
2004
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12
Conference Presentation
Optimierung eines neuen GaN Prozesses im Hinblick auf Homogenität
Steins, R.
2003
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13
Conference Presentation
Use of Modeling to Develop a New GaN Growth Process with Reduced Parasitic Deposits
Kaluza, N.
2003
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14
Conference Presentation
MOVPE GaN Growth: Determination of Activation Energy Using In-Situ Reflectometry
Kaluza, N.
2003
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Collection
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14
Document Type
Conference Presentation
Name
Hardtdegen, Hilde
14
Kaluza, N.
Steins, R.
Cho, Y. S.
4
Lüth, H.
4
Zettler, J.-T.
4
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Schmidt, R.
3
Thillosen, N.
3
Alam, A.
2
Beccard, R.
2
Bernat, P. F.
2
Haberland, K.
2
Javorka, P.
2
Makarov, Yu. N.
2
Marso, M.
2
Schmitt, T.
2
Sofer, Z.
2
Talalaev, R. A.
2
Wirtz, K.
2
Yakovlev, E. V.
2
Zorn, M.
2
von der Ahe, M.
2
Calarco, R.
1
Meijers, R.
1
Montanari, S.
1
Schäpers, Thomas
1
Trepk, T.
1
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Research Program
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
13
Grundlagen für zukünftige Informationstechnologien
1
Contributing Institute
Institut für Halbleiterschichten und Bauelemente; ISG-1
Center of Nanoelectronic Systems for Information Technology; CNI
8
Scientific Report
2004
6
2005
5
2003
3
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