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Lüth, H. AND Marso, M.

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Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik

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Lüth, H. AND Marso, M.

Open Access

Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik

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Journal Article 8

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Journal Article

High-power SiO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors

Heidelberger, G.
2005

Applied physics letters, 87 (2005) S. 143501

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Journal Article

Ultrafast metal-semiconductor-metal photodetectors on low-temperature-grown GaN

Mikulics, V. V.
2005

Applied physics letters, 86 (2005) S. 211110-1 - 211110-3

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Photomixers fabricated on nitrogen-ion-implanted GaAs

Mikulics, V. V.
2005

Applied physics letters, 87 (2005) S. 041106

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Ultrafast Low-Temperature-Grown Epitaxial GaAs Photodetectors Transferred on Flexible Plastic Substrates

Mikulics, V. V.
2005

IEEE photonics technology letters, 17 (2005) S. 1725 - 1727

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Journal Article

Growth and properties of GaN and AlN layers on silver substrates

Mikulics, V. V.
2005

Applied physics letters, 87 (2005) S. 212109

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Size-dependent Photoconductivity in MBE-Grown GaN-Nanowires

Calarco, R.
2005

Nano letters, 5 (2005) S. 981 - 984

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Investigation of buffer traps in an AlGaN/GaN/Si high electron mobility transistor by backgating current deep level transient spectroscopy

Marso, M.
2003

Applied physics letters, 82 (2003) S. 633 - 635

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Journal Article

AlGaN/GaN HEMTs on (111) silicon substrates

Javorka, P.
2002

IEEE Electron Device Letters, 23 (2002) S. 4 - 6

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Journal Article 8

Lüth, H. Marso, M. Kordos, P. 7 Javorka, P. 4 Mikulics, V. V. 4 Sobolewski, R. 3 more ... Wolter, M. 3 Wu, S. 3 Fox, P. T. 2 Förster, A. 2 Kocan, M. 2 Rizzi, A. 2 Adam, R. 1 Alam, A. 1 Aykanat, A. I. 1 Bernát, J. 1 Buca, Dan Mihai 1 Calarco, R. 1 Cámara Mayorga, I. 1 Güsten, R. 1 Heidelberger, G. 1 Heuken, M. 1 Khafizov, M. 1 Kovac, P. 1 Li, X. 1 Meijers, R. 1 Michael, E. A. 1 Richter, Th. 1 Schieder, R. 1 Sofer, Z. 1 see all ... less ...

Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik

Institut für Halbleiterschichten und Bauelemente; ISG-1 8 Center of Nanoelectronic Systems for Information Technology; CNI 6

2005 6 2002 1 2003 1

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