JuLib | Articles & more

The effect of carrier gas on GaN epilayer characteristics

Cho, Y. S.
2006

Physica status solidi / C, 3 (2006) S. 1408 - 1411

Get full text OpenAccess

2

The growth of Cr-doped GaN by MOVPE for spintronics

Cho, Y. S.
2006

3

Chromium Doped GaN Layers for Spintronics

Kaluza, N.
2006

4

Influences of H2/N2 Carrier Gas Mixtures on the Characteristics of GaN Epilayers

Cho, Y. S.
2006

5

Chromium doped GaN layers for spintronics

Kaluza, N.
2006

6

Talk (non-conference)

Optimization of Cr-doped GaN growth by MOVPE

Cho, Y. S.
2006

7

Systematic study on the growth mechanism of GaN/sapphire epilayers grown with different H2 and N2 carrier gas

Cho, Y. S.
2006

8

Terahertz photonic mixers as local oscillators for hot electron bolometer and superconductor-insulator-superconductor astronomical receivers

Cámara Mayorga, I.
2006

Journal of applied physics, 100 (2006) S. 043116-1 - 043116-4

Get full text OpenAccess OpenAccess

9

Ohmic contacts for GaAs based nanocolumns

Wensorra, J.
2006

Physica status solidi / A, 203 (2006) S. 3559 - 3564

10

Photoluminescence and Intrinsic Properties of MBE-Grown InN Nanowires

Stoica, T.
2006

Nano letters, 6 (2006) S. 1541 - 1547

Get full text OpenAccess

11

Top-down fabrication of GaAs/AlAs nanocolumns with lateral dimensions in the sub-100nm range

Wensorra, J.
2006

12

Resonant Tunneling in GaAs/AlAs Nanocolumns Improved by Quantum Collimation

Wensorra, J.
2006

13

Low temperature electronic transport in vertical sub-100nm resonant tunneling diodes

Lepsa, M. I.
2006

14

Surface enhanced Raman scattering by GaN nanocolumns

Milekhin, A. G.
2006

Physica status solidi / C, 3 (2006) S. 2065 - 2068

15

Impact of surface treatment under the gate on the current collapse of unpassivated AlGaN/GaN heterostructure field-effect transistors

Kordos, P.
2006

Semiconductor science and technology, 21 (2006) S. 67 - 71

16

An AlGaN/GaN two-color photodetector based on an AlGaN/GaN/SiC HEMT layer structure

Marso, M.
2006

Physica status solidi / C, 3 (2006) S. 2261 - 2264

17

Comparative study on unpassivated and passivated AlGaN/GaN HFETs and MOSHFETs

Heidelberger, G.
2006

Physica status solidi / A, 203 (2006) S. 1876 - 1881

18

GaAs photodetectors prepared by high-energy and higt-dose nitrogen implantation

Mikulics, M.
2006

Applied physics letters, 89 (2006) S. 091103

Get full text OpenAccess

19

Traveling-wave photomixer with recessed interdigitated contacts on low-temperature-grown GaAs

Mikulics, M.
2006

Applied physics letters, 88 (2006) S. 041118

Get full text OpenAccess

20