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1

Journal Article

High-power SiO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors

Heidelberger, G.
2005

Applied physics letters, 87 (2005) S. 143501

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2

Journal Article

SiO2/AlGaN/GaN MOSHFET with 0.7 µm gate-length and fmax/fT of 40/24 GHz

Bernát, J.
2005

Electronics letters, 41 (2005) S. 667 - 668

3

Journal Article

Influence of doping concentration on DC and RF performance of AlGaN/GaN HEMTs on silicon substrate

Marso, M.
2003

Physica status solidi / A, 200 (2003) S. 179 - 182

4

Journal Article

Effect of surface passivation on performance of AlGaN/GaN/Si HEMTs

Bernát, J.
2003

Solid state electronics, 47 (2003) S. 2097 - 2103

5

Journal Article

Influence of SiO2 and Si3N4 Passivation on AlGaN/GaN/Si HEMT Performance

Javorka, P.
2003

Electronics letters, 39 (2003) S. 1155

6

Journal Article

Growth and characterisation of AlGaN/GaN/HEMT on silicon substrates

Kalisch, H.
2002

Physica status solidi / A, 194 (2002) S. 464 - 467

7

Journal Article

Photoionization spectroscopy of traps in doped and undoped AlGaN/GaN HEMTs

Wolter, M.
2002

Physica status solidi / C (2002) S. 82 - 85

8

Journal Article

Investigation of AlGaN/GaN HEMTs on Si substrate using backgating

Marso, A.
2002

Physica status solidi / C (2002) S. 65 - 68

9

Journal Article

AlGaN/GaN HEMTs on (111) silicon substrates

Javorka, P.
2002

IEEE Electron Device Letters, 23 (2002) S. 4 - 6

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10

Journal Article

Photo-ionization spectroscopy of traps in AlGaN/GaN high-electron mobility transistors

Wolter, M.
2002

Journal of electronic materials, 31 (2002) S. 1321 - 1324

11

Journal Article

AlGaN/GaN HEMT optimization using the RoundHEMT technology

Marso, M.
2001

Physica status solidi / A, 188 (2001) S. 199

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