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Conference Presentation 3 Journal Article 3 Poster 2

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Journal Article

Capacitance characterization of AlN/GaN double barrier resonant tunnelling diodes

Kurakin, A. M.
2006

Physica status solidi / C, 3 (2006) S. 2265 - 2269

“...Kurakin, A. M....”

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Journal Article

Dynamic redistribution of the electric field of the channel in AlGaN/GaN high electron mobility transistor with nanometer-scale gate length

Vitusevich, S. A.
2005

Applied physics letters, 87 (2005) S. 192110

“...Kurakin, A. M....”

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Journal Article

Transport and noise features in AlGaN/GaN field effect transistors with nanometer-scaling gate length

Vitusevich, S. A.
2005

International journal of nanoscience, 04 (2005) S. 1001 - 1006

“...Kurakin, A. M....”

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Capacitance characterization of AlN/GaN double barrier resonant tunnelling diodes

Kurakin, A. M.
2005

“...Kurakin, A. M....”

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Conference Presentation

Peculiarities of low-temperature transport in two-dimensional systems on the base AlGaN/GaN

Kurakin, A. M.
2004

“...Kurakin, A. M....”

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Conference Presentation

Low-frequency noise in AlGaN/GaN heterostructures with high Al mole fraction

Vitusevich, S. A.
2004

“...Kurakin, A. M....”

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Low-temperature transport in AlGaN/GaN 2D electron systems

Vitusevich, S. A.
2004

“...Kurakin, A. M....”

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Conference Presentation

Transport and noise features in AlGaN/GaN field effect transistors with nanometerscaling gate length

Vitusevich, S. A.
2003

“...Kurakin, A. M....”

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Publications database 8 Open Access 1

Conference Presentation 3 Journal Article 3 Poster 2

Belyaev, A. E. 8 Danylyuk, S. V. 8 Klein, N. 8 Kurakin, A. M. 8 Lüth, H. Vitusevich, Svetlana 8 more ... Petrychuk, M. V. 4 Foxon, C. T. 2 Naumov, A. V. 2 Novikov, S. V. 2 Eastman, L. F. 1 Smart, J. 1 Tilak, V. 1 Vertiatchikh, A. 1 see all ... less ...

Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik 7 Grundlagen für zukünftige Informationstechnologien 1

Institut für Bio- und Chemosensoren; ISG-2 8 Center of Nanoelectronic Systems for Information Technology; CNI 4 Institut für Halbleiterschichten und Bauelemente; ISG-1 4

2004 3 2005 3 2003 1 2006 1

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