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Lantier, R.
1999
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Lantier, R.
1999
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Journal Article
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1
Journal Article
Influence of the first preparation steps on the properties of GaN layers grown on 6H-SiC by MBE
Lantier, R.
1999
MRS internet journal of nitride semiconductor research, 4S1 (1999) S. G.3.50
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2
Journal Article
Direct evidence of spontaneous polarization effect in GaN grown on SiC(0001) : heterojunction electronic properties
Lantier, R.
1999
Physica status solidi / A, 176 (1999) S. 615
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3
Journal Article
Evidence for relaxed and high quality growth of GaN on SiC(0001)
Boscherini, P. C.
1999
Applied physics letters, 74 (1999) S. 3308
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4
Journal Article
MBE growth and structural properties of GaN and AlN on 3CSiC(001) substrates
Gerthsen, D.
1999
Journal of crystal growth, 200 (1999) S. 353
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5
Journal Article
AlN and GaN epitaxial heterojunctions on 6H-SiC(0001) : valence band offset and polarization fields
Rizzi, A.
1999
Journal of vacuum science & technology / B, 17 (1999) S. 1674
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Name
Lantier, R.
Rizzi, A.
5
Lüth, H.
4
Boscherini, P. C.
2
Gerthsen, D.
2
Mobilio, S.
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Neubauer, B.
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d'Acapito, F.
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Cingolani, R.
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Coli, D. J.
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Dieker, C.
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Frabboni, S.
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Guggi, D.
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Lugli, P.
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Monti, F.
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Research Program
Halbleiterschichtsysteme und Mesoskopische Strukturen
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Institut für Schicht- und Ionentechnik; ISI
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1999
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