JuLib | Articles & more - {"JARA-FIT; JARA-FIT"}

1

Modulation phenomena in Si nanowire field-effect transistors characterized using noise spectroscopy and gamma radiation technique

Pud, S.
2013

Journal of applied physics, 113 12, S. 124503 -1-10

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”
OpenAccess

2

Journal Article

Impact of strain and Ge concentration on the performance pf planar SiGe band-to-band-tunneling transistors

Schmidt, M.
2012

Solid state electronics, 71 (2012) S. 42 - 47

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

3

Journal Article

20 nm Gate length Schottky MOSFETs with ultra-thin NiSi/epitaxial NiSi2 source/drain

Knoll, L.
2012

Solid state electronics, 71 (2012) S. 88 - 92

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

4

Journal Article

Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source

Zhao, Q.T.
2012

Solid state electronics, 74 (2012) S. 97-101

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

5

Journal Article

Simulation of Fabricated 20-nm Schottky Barrier MOSFETs on SOI:Impact of barrier Lowering

Padilla, J.L.
2012

IEEE Transactions on Electron Devices, 59 (2012) S. 1320 - 1327

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

6

Journal Article

Electrical characterization of O-gated uniaxial tensile strained Si nanowire-array metal-oxide-semiconductor field effect transistors with <100> and <110> channel orientations

Habicht, S.
2012

Thin solid films, 520 (2012) S. 3332 - 3336

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

7

Journal Article

Hole Transport in Strained Si0.5Ge0.5 QW-MOSFETs with <110> and <100> Channel Orientations

Minamisawa, R.A.
2012

IEEE electron device letters, 33 (2012) S. 1105 - 1107

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

8

Journal Article

Hole Mobilities of Si/Si0.5Ge0.5 Quantum-Well Transistor on SOI and Strained SOI

Yu, W.
2012

IEEE electron device letters, 33 (2012) S. 758 - 760

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

9

Journal Article

p-Type Ion Implantation in Tensile Si/Compressive Si0.5Ge0.5/Tensile Strained Si Heterostructures

Minamisawa, R.A.
2012

Journal of the Electrochemical Society, 159 (2012) S. H44 - H51

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

10

Journal Article

LaLuO3 higher-k dielectric integration in SOI MOSFETs with a gate-first process

Nichau, A.
2012

Solid state electronics, 71 (2012) S. 19 - 24

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

11

Journal Article

Anisotropy of strain relaxation in (100) and (110) Si/SiGe heterostructures

Trinkaus, H.
2012

Journal of applied physics, 111 (2012) S. 014904

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”
Get full text Published under German "Allianz" Licensing conditions on 2012-01-05. Available in OpenAccess from 2012-01-05

12

Journal Article

Laser synthesis of germanium tin alloys on virtual germanium

Stefanov, S.
2012

Applied physics letters, 100 (2012) S. 104101

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”
Get full text Published under German "Allianz" Licensing conditions on 2012-03-06. Available in OpenAccess from 2012-03-06

13

Journal Article

Investigation of a hydrogen implantation-induced blistering phenomenon in Si0.70Ge0.30

Singh, R.
2011

Semiconductor science and technology, 26 (2011) S. 125001

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

14

Journal Article

Epitaxial growth of Ni(Al)Si0.7Ge0.3 on Si0.7Ge0.3/Si(100) by Al interlayer mediated epitaxy

Zhang, B.
2011

Applied physics letters, 98 (2011) S. 252101

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”
Get full text Published under German "Allianz" Licensing conditions on 2011-06-20. Available in OpenAccess from 2011-06-20

15

Journal Article

An Improved Si tunnel Field Effect Transistor with a Buried Strained Si1-xGex Source

Zhao, Q.T.
2011

IEEE Electron Device Letters, 32 (2011) S. 1480 - 1482

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

16

Journal Article

Silicon Nanowire Tunneling Field-Effect Transistor Arrays: Improving Subthreshold Performance Using Excimer Laser Annealing

Smith, J.T.
2011

IEEE Transactions on Electron Devices, 58 (2011) S. 1822 - 1829

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

17

Journal Article

Improved NiSi0.8Ge0.2/Si0.8Ge0.2 Contacs by C+ Pre-Implantation

Zhang, B.
2011

Electrochemical and solid-state letters, 14 (2011) S. H261-H263

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

18

Journal Article

High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate

Yu, W.
2011

Solid state electronics, 62 (2011) 1, S. 185 - 188

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

19

Journal Article

Zn nanoparticles irradiated with swift heavy ions at low fluences: Optically-detected shape elongation induced by nonoverlapping ion tracks

Amekura, H.
2011

Physical Review B Physical review / B, 83 83 (2011 2011) 20 20, S. 205401 205401

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”
Get full text OpenAccess OpenAccess

20

Journal Article

Rare-Earth Scandate/TiN Gate Stacks in SOI MOSFETs Fabricated with a Full Replacement Gate Process

Durgun Özben, E.
2011

IEEE Transactions on Electron Devices, 58 (2011) S. 617 - 622

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

Narrow Search Results