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1

Journal Article

Observation of growth during the MOVPE of III-nitrides

Hardtdegen, H.
2006

Journal de physique / 4, 132 (2006) S. 177 - 183

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2

Conference Presentation

Observation of Growth during the MOVPE of III-Nitrides

Hardtdegen, H.
2005

3

Journal Article

MOVPE process for horizontal reactors with reduced parasitic deposition

Hardtdegen, H.
2004

Journal of crystal growth, 272 (2004) S. 407 - 414

4

Journal Article

MOVPE growth and in situ characterization of GaN layers on sapphire substrates

Hardtdegen, H.
2004

Physica status solidi / A, 201 (2004) S. 312 - 319

5

Conference Presentation

MOVPE process for horizontal reactors with reduced parasitic deposition

Hardtdegen, H.
2004

6

Conference Presentation

Use of Modeling to Develop a New GaN Growth Process with Reduced Parasitic Deposits

Kaluza, N.
2003

“...Hardtdegen, H....”

7

Conference Presentation

Über die Bestimmung der Wachstumstemperatur beim MOVPE-Wachstum von GaN auf Saphir

Schmidt, R.
2002

“...Hardtdegen, H....”

8

Conference Presentation

GaN MOVPE growth : a comparison between modeling and experimental results

Nastase, N.
2002

“...Hardtdegen, H....”

9

On the use of real time multi-wavelength reflectance transients for the optimization of GaN growth in MOVPE

Hardtdegen, H.
2002

10

Journal Article

Homogeneity analysis of ion-implanted resonant tunneling diodes for applications in digital logic circuits

Malindretos, J.
2002

Superlattices and microstructures, 31 (2002) S. 315 - 325

“...Hardtdegen, H....”

11

Talk (non-conference)

Employment of EpiR-TT during GaN growth

Schmidt, R.
2002

“...Hardtdegen, H....”

12

Conference Presentation

Growth of GaN optimized by means of a spectroscopic real-time sensor

Hardtdegen, H.
2002

13

Talk (non-conference)

On the suitability of getter purified hydrogen for the LP-MOVPE of (AlGa)As : a comparison to Pd-diffused hydrogen

Hardtdegen, H.
2001

14

Conference Presentation

The Influence of Nucleation Parameters on GaN Buffer Layer Properties Used for HEMT Application

Nastase, N.
2001

“...Hardtdegen, H....”

15

Investigation of AIN nucleation layer growth on sapphire substrates with respect to GaN buffer characteristics for HEMT application

Nastase, N.
2001

“...Hardtdegen, H....”

16

On the influence of the nucleation parameters on GaN buffer layer properties used for HEMT application

Nastase, N.
2001

“...Hardtdegen, H....”

17

Journal Article

On the suitability of getter purified hydrogen for the LP-MOVPE of (AlGa)As : a comparison to Pd-diffused hydrogen

Hardtdegen, H.
2001

Journal of electronic materials, 30 (2001) S. 1397

18

Journal Article

The influence of nucleation parameters on GaN buffer layer properties used for HEMT application

Nastase, N.
2001

Physica status solidi / A, 188 (2001) S. 647

“...Hardtdegen, H....”

19

Conference Presentation

GaN and AlGaN/GaN HEMT on (111) Silicon Substrates

Alam, A.
2001

“...Hardtdegen, H....”

20

On the suitability of getter purified hydrogen for the LP-MOVPE of (AlGa)As : a comparison to Pd-diffused hydrogen

Hardtdegen, H.
2001

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