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1

Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes

Völkel, Lukas
2024

Advanced functional materials, 34 (2024) 15, S. 2300428

OpenAccess

2

Journal Article

Accurate Evaluation Method for HRS Retention of VCM ReRAM

Kopperberg, N.
2024

APL materials, 12 (2024) 3, S. 031112

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3

Journal Article

Interfacial Thermal Resistive Switching in (Pt,Cr)/SrTiO 3 Devices

Álvarez-Martínez, Víctor
2024

ACS applied materials & interfaces, 16 (2024) 12, S. 15043 - 15049

OpenAccess

4

Journal Article

Analytical modelling of the transport in analog filamentary conductive-metal-oxide/HfO x ReRAM devices

Falcone, Donato Francesco
2024

Nanoscale horizons, 9 (2024) 5, S. 775-784

OpenAccess

5

Journal Article

System model of neuromorphic sequence learning on a memristive crossbar array

Siegel, Sebastian
2023

Neuromorphic computing and engineering, 3 (2023) S. 024002

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6

Journal Article

The MoS 2 -Graphene-Sapphire Heterostructure: Influence of Substrate Properties on the MoS 2 Band Structure

Wördenweber, Henrik
2023

The journal of physical chemistry / C, 127 (2023) 22, S. 10878–10887

OpenAccess

7

Journal Article

Ternary Łukasiewicz logic using memristive devices

Bengel, Christopher
2023

Neuromorphic computing and engineering, 3 (2023) 4, S. 044001 -

OpenAccess

8

Journal Article

Review on Resistive Switching Devices Based on Multiferroic BiFeO3

Zhao, Xianyue
2023

Nanomaterials, 13 (2023) 8, S. 1325 -

OpenAccess

9

Journal Article

Spatio‐Temporal Correlations in Memristive Crossbar Arrays due to Thermal Effects

Schön, Daniel
2023

Advanced functional materials, 33 (2023) 22, S. 2213943 -

OpenAccess

10

Journal Article

Simulating the filament morphology in electrochemical metallization cells

Buttberg, Milan
2023

Neuromorphic computing and engineering, 3 (2023) 2, S. 024010 -

OpenAccess

11

Journal Article

Tailor-made synaptic dynamics based on memristive devices

Bengel, Christopher
2023

Frontiers in electronic materials, 3 (2023) S. 1061269

OpenAccess

12

Journal Article

A Study of the Electroforming Process in 1T1R Memory Arrays

Son, Seokki
2023

IEEE transactions on computer-aided design of integrated circuits and systems, 42 (2023) 2, S. 558 - 568

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13

Journal Article

Improved Arithmetic Performance by Combining Stateful and Non‐Stateful Logic in Resistive Random Access Memory 1T–1R Crossbars

Brackmann, Leon
2023

Advanced intelligent systems, 6 (2023) 3, S. 2300579

OpenAccess

14

Journal Article

Correlation between Electronic Structure, Microstructure, and Switching Mode in Valence Change Mechanism Al 2 O 3 /TiO x ‐Based Memristive Devices

Aussen, Stephan
2023

Advanced electronic materials, 9 (2023) 12, S. 2300520

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15

Journal Article

Migration-Enhanced Metal–Organic Chemical Vapor Deposition of Wafer-Scale Fully Coalesced WS 2 and WSe 2 Monolayers

Tang, Songyao
2023

Crystal growth & design, 23 (2023) 3, S. 1547 - 1558

16

Journal Article

Impact of Carbon Impurities on Air Stability of MOCVD 2D-MoS2

Ghiami, Amir
2023

Surfaces, 6 (2023) 4, S. 351 - 363

OpenAccess

17

Journal Article

Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems

Frahm, T.
2023

IEEE journal of the Electron Devices Society, 11 (2023) S. 432 - 437

OpenAccess

18

Journal Article

SET Kinetics of Ag/HfO2-Based Diffusive Memristors under Various Counter-Electrode Materials

Chekol, Solomon Amsalu
2023

Micromachines, 14 (2023) 3, S. 571 -

OpenAccess

19

Journal Article

Bit slicing approaches for variability aware ReRAM CIM macros

Bengel, Christopher
2023

Information technology (2023) S. 1

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20

Journal Article

Effect of Oxygen Exchange between Two Oxide Layers of a Memristive Bilayer Valence-Change Memory Cell on the Switching Polarity

Sommer, Nils
2023

Physical review applied, 19 (2023) 4, S. 044084

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